1N5372B/TR8

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Single Zener diodes are components that allow current to pass in only one direction, usually from anode to cathode. When a specific reverse voltage is applied to the diode, a small amount of current starts to flow in the reverse direction, thus causing the diode to enter a forward conduction state. The 1N5372B/TR8 is a Single Zener Diode, which is categorized under Diodes - Zener - Single.

The 1N5372B/TR8 is used in many applications. It is used mainly in regulating or limiting the transient or ripple voltage in regulated power supplies. It also provides protection from damage in secondary rectifiers in power supply circuits. In addition, it provides voltage regulation to help reduce the possibility of prolonged overvoltage due to a momentary power failure or increase in line voltage. The 1N5372B/TR8 has a breakdown voltage of 5.6V and its maximum PIV of 7.3V make it suitable for use in controlling the limited voltage across the collector-emitter junction of the power transistor in switching power supplies.

The working principle of Single Zener Diodes is very simple. These diodes always cause a large, reverse-biased voltage drop between anode and cathode. When this voltage drop is greater than the Breakdown Voltage of the diode, a small amount of current begins to flow from cathode to anode. This current flow is limited by the Zener Impedance of the diode, which is specified in its datasheet. When this Zener Impedance is exceeded, a steady state current equal to the maximum ratings will flow through the diode. This steady current flow is known as the Zener Current, and it is the maximum current that the device can withstand.

In summary, the 1N5372B/TR8 is a Single Zener Diode that is typically used in applications such as regulating or limiting the ripple voltage in power supplies, providing protection from damage in power supply circuits, and providing voltage regulation. Its maximum Breakdown Voltage of 5.6V and its maximum PIV of 7.3V make it suitable for use in controlling the limited voltage across the collector-emitter junction of the power transistor in many circuits. Its working principle is very simple and it relies on a large reverse-biased voltage drop between anode and cathode, which when exceeding the Breakdown Voltage of the diode causes a steady state current equal to the maximum ratings.

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