1N5373E3/TR13 Allicdata Electronics
Allicdata Part #:

1N5373E3/TR13-ND

Manufacturer Part#:

1N5373E3/TR13

Price: $ 0.55
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 68V 5W T18
More Detail: Zener Diode 68V 5W ±20% Through Hole T-18
DataSheet: 1N5373E3/TR13 datasheet1N5373E3/TR13 Datasheet/PDF
Quantity: 1000
1250 +: $ 0.49877
Stock 1000Can Ship Immediately
$ 0.55
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 68V
Tolerance: ±20%
Power - Max: 5W
Impedance (Max) (Zzt): 44 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 49V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: T-18
Base Part Number: 1N5373
Description

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Diodes - Zener - Single

The 1N5373E3/TR13 is a silicon planar power Zener diode that is used to provide overvoltage protection. This device is specialized for reverse breakdown voltages up to 47 V. It has up to 11 mW at 3.33 V and up to 8 mW at 35 V of power dissipation. When used as an overvoltage protection device, it will clamp (or limit) voltages to specified values. It also has a fast response time. Additionally, the device combines low forward voltage drop with fast reverse recovery time.

Applications

The 1N5373E3/TR13 is typically used for clamping, or limiting, overly high voltages in electronic devices and circuits. It is often used in high-speed circuit protection applications such as overvoltage protection for digital circuits, transducers and variable sensors, among others. It can be used as a voltage crowbar device. As a crowbar device, the 1N5373E3/TR13 clamps voltage levels to predetermined upper limits, preventing electrical system damage caused by power surges.

Working Principle

A Zener diode operates under the principle of avalanche breakdown. This occurs when a reverse voltage is applied to the junction, which causes the physical collision between electrons and holes. The electric field created by the voltage accumulates until the built-in electric field between the junction layer of the diode increases and exceeds the electric field of the reverse voltage. This causes electron-hole pairs to form, creating an avalanche effect, allowing the rapid flow of current through the junction. This allows for a stable and predictable breakdown voltage threshold.

The 1N5373E3/TR13 is designed to specifically absorb energy when used for voltage limiting or overvoltage protection. It does so by actively dissipating energy throughout its construction. The energy required to overcome the diode\'s built-in electric field is transitioned from electrical energy to heat energy that is dissipated through the device. The device is designed to minimize reverse recovery time, which ensures that the power surges can be clamped or limited quickly. This makes it ideal for high-speed circuit protection applications.

The specific data is subject to PDF, and the above content is for reference

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