Allicdata Part #: | 1N5376AE3/TR8-ND |
Manufacturer Part#: |
1N5376AE3/TR8 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 87V 5W T18 |
More Detail: | Zener Diode 87V 5W ±10% Through Hole T-18 |
DataSheet: | 1N5376AE3/TR8 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 87V |
Tolerance: | ±10% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 75 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 63V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | T-18 |
Base Part Number: | 1N5376 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 1N5376AE3/TR8 is a fixed-voltage surface-mount zener diode designed for applications like voltage normalizing and stabilizing, horizontal deflection in color picture tubes, static protection of phone lines, and overvoltage protection. It provides reliable over-voltage protection and superior bandgap stability due to its tight tolerance. The 1N5376AE3/TR8 also features high serially connectable current capability, low reverse current, low forward voltage drop, and fast response time. This makes it ideal for a wide range of applications in the automotive, consumer, and industrial markets.
The 1N5376AE3/TR8 zener diode is a conventional diode with a heavily doped junction, allowing it to conduct in both forward and reverse bias bias applications. This makes it more efficient than other types of diodes when conducting current. It works by keeping a constant voltage drop between terminals, no matter how the voltage on the external circuit changes. This makes it ideal for applications that require a regulated voltage in order to function correctly.
When the 1N5376AE3/TR8 is forward biased, the current flows in the direction of the arrow. The P-type region, the anode, acts as a diode by providing the majority of the voltage drop between the anode and the cathode. At the same time, the N-type region, or cathode, helps to reduce the voltage drop across the depletion region by providing an easier path for electrons to pass through.
The 1N5376AE3/TR8\'s reverse-biased application is a bit more complicated. In reverse, the current is prevented from passing through the diode in the direction of the arrow. However, due to the high doping in the junction of the diode, the current will then flow from the anode to the cathode through an electric field known as the Zener breakdown voltage. This voltage, known as the Zener voltage, is the voltage at which the diode will allow the current to pass through and regulate the voltage. This Zener breakdown voltage is generally adjusted by a small amount to adjust for slight changes in voltage.
The 1N5376AE3/TR8 is also available in various variations. These variations can provide more robust operation as well as a tighter tolerance. The most commonly used variation is the TR8, which features a tighter tolerance, a maximum operating temperature of 150°C, a maximum power dissipation of 350mW, and a maximum surge current of 150mA.
Overall, the 1N5376AE3/TR8 is an ideal choice for applications that require a regulated voltage. It has two unique features that make it a versatile choice: its tight tolerance and high serially connectable current capabilities. In addition, its low forward voltage drop and fast response time make it an ideal choice for applications such as overvoltage protection, voltage normalizing, and static protection of phone lines. With the various variations available, this zener diode is a well-suited option for a variety of applications in the automotive, consumer, and industrial markets.
The specific data is subject to PDF, and the above content is for reference
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