1N5376B/TR8

Diodes - Zener - Single (1N5376B/TR8)

The 1N5376B/TR8 is a silicon zener diode housed in the DO-35 glass-encapsulated package. Manufactured using low-cost, high-quality silicon materials doped to certain concentration levels and machine-sorted to specified cut-off voltage ranges, the 1N5376B/TR8 is suitable for a variety of applications. Its reverse breakdown, or Zener, voltage value of 8 V is omni-directional and it is known for its stability, high accuracy and superior temperature coefficient.

Applications

The 1N5376B/TR8 is suitable for a wide range of applications including voltage protection, voltage regulation, current limitation, temperature compensation, post regulator, noise filtering and voltage clamping. It can be used in the regulation of operational amplifiers where high temperature stabilization is needed, as well as in charging circuits, surge protectors and voltage clamps. This diode is also appropriate for power supply regulation and low-noise gain control in audio systems.

Working Principle

The 1N5376B/TR8 operates on a Zenor diode principle. This principle is based on PN-junction diode where, under forward bias, holes and electrons diffuse across the depletion region in which intersection molecules move away from each other. This action gives the opportunity for free electrons to cross the junction from the P-type material to the N-type material when a small sufficient reverse bias is applied. This then results in the establishment of a region in the junction where carriers concentration is low. When the applied voltage is greater than the breakdown voltage, the electric field across the junction will become high enough to cause a large number of electron-hole pairs along with collision ionization and hence, there will be an avalanche effect.

Under the reverse bias, the current flowing through the diode is caused by the diffusion of majority carriers, in the absence of any external electric field. As the reverse-bias voltage increases, a large number of electrons and holes diffuse through the PN junction as minority carriers. Once the applied reverse voltage exceeds the breakdown voltage, the current exponentially increases and the diode is destroyed beyond the rated peak reverse voltage (PIV).

Conclusion

The 1N5376B/TR8 is a silicon Zener diode housed in a DO-35 package that is ideal for a variety of applications such as voltage regulation, current limitation, temperature compensation, noise filtering, voltage clamping and surge protection. It operates on a Zenor diode principle based on the PN-junction diode and is known for its stability, high accuracy and superior temperature coefficient. This makes it a suitable choice for use in audio systems, operational amplifiers, charging circuits, power supplies and other applications that require a high degree of precision and temperature regulation.