Allicdata Part #: | 1N5376BE3/TR8-ND |
Manufacturer Part#: |
1N5376BE3/TR8 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 87V 5W T18 |
More Detail: | Zener Diode 87V 5W ±5% Through Hole T-18 |
DataSheet: | 1N5376BE3/TR8 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 87V |
Tolerance: | ±5% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 75 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 63V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | T-18 |
Base Part Number: | 1N5376 |
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1N5376BE3/TR8 is a high power Zener diode manufactured to utilize silicon epitaxial planar process. Zener diodes are used to regulate voltage and current, and they are specifically used to protect a circuit against excessive over-voltage. The 1N5376BE3/TR8 is part of a family of diodes used in circuits, and it is specifically used in applications where both reverse breakdown voltage and power handling capability are important.
The 1N5376BE3/TR8 offers a reverse breakdown voltage of 6.2V and its power handling capability ranges from 5W to 8W. It is also capable of withstanding peak current as high as 9A. The component features an exceptionally low leakage current and high reverse breakdown voltage, making it especially suitable for Zener applications. The 1N5376BE3/TR8 can be used in wide range of circuits to reduce voltage drop, improve system reliability, and efficiently regulate the circuit\'s power supply.
The main application field of the 1N5376BE3/TR8 Zener diode is for power supply regulation, as it able to clamp a voltage overshoot up to 6.2V and to limit the power flow at the same time. This type of diode can also be used in voltage references, temperature compensation circuitry, protection circuitry, and waveform shaping. Some of the typical uses include in DC-DC converters and switching power supplies, voltage regulation in linear power supplies, and LED lighting.
The working principle of a Zener diode relies on its reverse breakdown voltage caused by an electric field. When a Zener diode is connected in reverse bias, the electric field created across the P-N junction causes electrons to move from the N-type material to the P-type material. This voltage transfer causes the diode to breakdown, allowing a current to pass through it. The breakdown voltage and corresponding current are controlled by compromising between the thickness of the depletion layer and the amount of doping in each layer of the P-N junction.
The 1N5376BE3/TR8 Zener diode is designed for use in applications where both reverse breakdown voltage and power handling capability are important. It is capable of withstanding peaks currents up to 9A, and is used in circuits to regulate voltage, reduce voltage drop, and improve system reliability.
The specific data is subject to PDF, and the above content is for reference
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