Allicdata Part #: | 1N5376CE3/TR13-ND |
Manufacturer Part#: |
1N5376CE3/TR13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 87V 5W T18 |
More Detail: | Zener Diode 87V 5W ±2% Through Hole T-18 |
DataSheet: | 1N5376CE3/TR13 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 87V |
Tolerance: | ±2% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 75 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 63V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | T-18 |
Base Part Number: | 1N5376 |
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The 1N5376CE3/TR13 diode is a single zener diode that works on a variety of electrical applications. The zener diode is widely used as a voltage regulator, switching regulator and for transient voltage suppression. It also acts as a protection device for over voltage, over current and reverse polarity conditions, as it will limit the applied voltage to the zener voltage.
The 1N5376CE3/TR13 is constructed using two silicon slices, between which a highly doped intrinsic layer of silicon is sandwiched. Heavy doping of the intrinsic layer allows for a relatively low voltage application, usually in the range of 0.7V to 19V. This level of doping also means that a highly resistance layer is found between the two silicon slices, which results in an ideal diode.
This diode is designed to work with a wide range of voltages, both AC and DC. Its characteristics provide good stability when applying different voltages, while its VZ (zener voltage) and its high reverse leakage current rating provide good performance even in the most extreme environments. The 1N5376CE3/TR13 has an inherent capability to provide a regulated voltage output, despite the presence of a wide range of input voltages and current. The voltage remains at a constant level when the varying input voltage does not exceed the VZ rating.
The 1N5376CE3/TR13 is typically used in applications where the continuous zener current is very low and a medium size heat sink is not required. Examples of these applications include voltage regulation, switching regulators and transient voltage suppression, in addition to its use as a protection device in over voltage, over current and reverse polarity conditions. The 1N5376CE3/TR13 is also used to provide a highly reliable, low cost partial voltage regulator for power supplies, for devices such as LED lamps and LCD monitors.
The working principle of the 1N5376CE3/TR13 diode is quite simple. The zener diode is biased in the reverse direction, so that the current from the input voltage flows from the anode to cathode and then passes through the zener diode in a reverse direction. In this mode, the 1N5376CE3/TR13 acts as a voltage regulator, with its VZ rating, limiting the voltage to a certain level. This is accomplished by adjusting the gate voltage, through the power supply, to the desired level. Due to the constant voltage applied, the 1N5376CE3/TR13 thus acts as a voltage regulator, providing a constant voltage supply to the load.
The 1N5376CE3/TR13 is a versatile power management device, which enables a wide variety of electrical applications to be powered safely and efficiently. It features a low VZ rating, high reverse leakage current and a wide operating temperature range. The diode’s inherent capability to provide regulated voltage at a wide range of input voltages and currents makes it suitable for a wide range of applications and extreme environments. It is also highly reliable and cost effective.
The specific data is subject to PDF, and the above content is for reference
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