Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Voltage - Zener (Nom) (Vz):	160V
Tolerance:	±20%
Power - Max:	5W
Impedance (Max) (Zzt):	350 Ohms
Current - Reverse Leakage @ Vr:	500nA @ 115V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 1A
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	T-18, Axial
Supplier Device Package:	T-18
Base Part Number:	1N5384

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Introduction

The 1N5384/TR12 is a single Zener diode with a breakdown voltage of 12 volts. It is used for the protection of other electronic components and circuits from high electrical voltages. It is designed to prevent excessive current flow through its terminals by limiting voltage and regulating the current. Its application field mainly lies in areas such as power supply limiter circuits, DC-to-DC converters, digital circuits, AC converters and transmitter/receiver circuits.

Construction

The basic construction of a Zener diode is similar to that of a PN junction diode, but with an additional heavily doped region in the reverse biased N-type region. This heavily doped region forms the Zener region and its characteristics are determined by the doping levels and junction area.The 1N5384/TR12 consists of a single diode made of silicon with a lead-frame structure. It has a maximum junction temperature of 150℃, a maximum power dissipation of 200mW, a low forward voltage of 0.9V, a switched on voltage of 14V, and a Zener current of 2mA.

Working Principle

The 1N5384/TR12 works by providing a forward bias voltage to the PN junction diode. During normal operation, this forward bias is maintained by the applied voltage. This bias voltage causes a current to flow through the diode, allowing it to function as an electrically short. As the forward bias increases, the diode reaches its breakdown voltage. At this point, the reverse bias increases dramatically, allowing current to flow in a reverse direction as well. This reversed current is known as the Zener current. Its magnitude is determined by the amount of reverse bias applied, but is typically very small.The 1N5384/TR12 has a breakdown voltage of 12V, meaning that when a 12V reverse bias is applied, the Zener current will reach its maximum value. The Zener current allows the device to dissipate excessive energy and regulate the flow of current. This in turn protects sensitive electronic components from damage caused by high voltages.

Conclusion

In conclusion, the 1N5384/TR12 is a single Zener diode designed to provide reverse voltage protection for electronic circuits. It is constructed of a lead-frame structure made of silicon and features a maximum junction temperature of 150℃, a forward voltage of 0.9V and an Zener current of 2mA. Its breakdown voltage is 12V, which allows it to regulate and dissipate excessive energy and protect sensitive components from damage caused by high electrical voltages.

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