
Allicdata Part #: | 1N5386E3/TR13-ND |
Manufacturer Part#: |
1N5386E3/TR13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 180V 5W T18 |
More Detail: | Zener Diode 180V 5W ±20% Through Hole T-18 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 180V |
Tolerance: | ±20% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 430 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 130V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | T-18 |
Base Part Number: | 1N5386 |
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1N5386E3/TR13 is a zener diode commonly used in electromagnetic interference (EMI) and radio frequency interference (RFI) filters and in current-limiting applications. It is a fast-recovery diode designed for applications such as voltage regulation, voltage stabilization, switching and clamping circuits. When current flows in the forward direction the diode behaves as a normal silicon diode, however when a certain reverse bias voltage is applied it behaves as a Zener and offers almost constant voltage over a broad range.
The 1N5386E3/TR13 single zener diode works on the principle of avalanche breakdown. Avalanche breakdown occurs when the electric field across a lightly doped p-n junction becomes strong enough to create electron-hole pairs, which in turn cause current to increase rapidly and breakdown the junction. This behavior is due to the reverse bias between the ions on either side of a PN junction. The increased current causes an avalanche of electrons which increases exponentially as a function of voltage.
This device features an IMPATT (Impact Avalanche Transit Time) construction with both planar and stepped junction designs for higher reliability and faster response times. It offers the capability to simultaneously suppress conducted and radiated emissions from sources such as power supplies, motors, and heating elements. The 1N5386E3/TR13 zener diode offers high junction capacitance and excellent switching speed, providing accurate voltage regulation and noise suppression over a wide frequency range.
The most common application of the 1N5386E3/TR13 zener diode is in current-limiting circuits, where they act as a resistor that only allows a certain amount of current to pass without dissipating power. They can also be used in voltage regulators, where they act as a voltage source. Zener diodes are also commonly used in power supplies to provide a steady voltage source and in clamping circuits to minimize unwanted surges in the signal. Additionally, they are often used in EMI/RFI noise filters for suppressing unwanted noise in audio signals.
The 1N5386E3/TR13 zener diode is designed for reliable operation in automotive, communications, consumer, industrial, and medical applications. It has a wide operating temperature range of -65°C to 150°C and is capable of handling high surge currents. This device is available in both through-hole and surface mount packages.
In conclusion, the 1N5386E3/TR13 is a fast-recovery zener diode that offers high reliability and excellent switching speed for regulating current and suppressing conducted and radiated noise. It can be used in a variety of applications such as current-limiting circuits, voltage regulators, clamping circuits, EMI/RFI noise filters, and much more.
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