
Allicdata Part #: | 1N5388AE3/TR12-ND |
Manufacturer Part#: |
1N5388AE3/TR12 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 200V 5W T18 |
More Detail: | Zener Diode 200V 5W ±10% Through Hole T-18 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 200V |
Tolerance: | ±10% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 480 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 144V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | T-18 |
Base Part Number: | 1N5388 |
Description
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Diodes – Zener – Single
The 1N5388AE3/TR12 is a single zener diode, manufactured by ON Semiconductor. It belongs to the company’s 1N53xx series of standard, 500 mW, single power Zener Diodes, and is available in a DO-41 package. It is designed to provide regulated voltage at currents from 1 mA to 500 mA.This diode is mainly used for voltage regulation, voltage reference, and for isolating circuits from transients. It is ideal for applications in consumer electronics, automotive, aviation, computer peripherals, solar cells, LED lighting, and other industrial electronics.The 1N5388AE3/TR12 has a series of features that make it suitable for these applications. It has an operating junction temperature range of -65°C to +175°C, a maximum power dissipation of 500 mW and a forward voltage of 1.1V. It also has a regulated voltage range of 5.0V, and a zener impedance of 4.3K ohms. The device also has a special integrated protection mechanism that prevents damage in the circuit due to excessive current.The 1N5388AE3/TR12 works on the principle of reverse breakdown. It is an electrostatic breakdown device, where the reverse breakdown occurs when an electric field of a certain magnitude is applied. As the voltage is increased from 0 volts, the electric field strength increases, and once it reaches the breakdown voltage, conduction occurs. This allows the current to flow in the opposite direction and the diode can then start regulating voltage in the circuit.The device has a high forward voltage, which limits the current to a specified level, and a reverse voltage, which drives the device into the reverse breakdown region. When this happens, the diode acts as a reverse biased rectifier, allowing the current to flow in the reverse direction. This is called a "zener breakdown" and enables the device to regulate voltage levels in the circuit.The 1N5388AE3/TR12 has two leads, which allow current to flow through the device when a voltage is applied. The anode is connected to the positive voltage and the cathode is connected to the negative voltage. When the cathode is negative, the diode conducts current and when the anode is positive, the diode blocks current.In summary, the 1N5388AE3/TR12 is a single zener diode, manufactured by ON Semiconductor, with a series of features that make it suitable for applications such as consumer electronics, automotive, and aviation. It is designed to provide regulated voltage at currents from 1 mA to 500 mA and works on the principle of reverse breakdown. It has an operating junction temperature range of -65°C to +175°C, a maximum power dissipation of 500 mW and a forward voltage of 1.1V. The device also has a special integrated protection mechanism that prevents damage in the circuit due to excessive current.The specific data is subject to PDF, and the above content is for reference
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