| Allicdata Part #: | 1N5397-E3/54GITR-ND |
| Manufacturer Part#: |
1N5397-E3/54 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 600V 1.5A DO204AL |
| More Detail: | Diode Standard 600V 1.5A Through Hole DO-204AL (DO... |
| DataSheet: |  1N5397-E3/54 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 600V |
| Current - Average Rectified (Io): | 1.5A |
| Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1.5A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 2µs |
| Current - Reverse Leakage @ Vr: | 5µA @ 600V |
| Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AL, DO-41, Axial |
| Supplier Device Package: | DO-204AL (DO-41) |
| Operating Temperature - Junction: | -50°C ~ 150°C |
| Base Part Number: | 1N5397 |
Description
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The 1N5397-E3/54 is a single rectifier diode used in a variety of applications. It is a small package with a low forward voltage drop and is suitable for switching applications in consumer electronics and various other industrial areas. The 1N5397-E3/54 is designed to be a basic diode with no special characteristics such as temperature coefficient or avalanche capability.The 1N5397-E3/54 is a Silicon (Si) diode and is designed for use in power management circuits. It has a maximum rating of 4 Amps and is rated for both forward and reverse bias operations. The maximum reverse voltage is 75 Volts, making it suitable for many applications.The 1N5397-E3/54 is categorized as a “high performance” diode because it has a frequency of operation that is higher than normal diodes. The maximum switching frequency of the 1N5397-E3/54 is 75 MHz, which is well above the operating frequency limit of 50 MHz of other diodes.The 1N5397-E3/54 is commonly used in power management and consumer electronics applications. It is used to provide protection from over-voltage, over-current, and reverse-voltage. It can also be used to provide circuit protection and switching in consumer electronics applications.The working principle of the 1N5397-E3/54 is based on the PN-junction between the two pieces of semiconductor material, the anode and the cathode. When a forward bias voltage is applied to the PN-junction, current will flow through the diode, allowing current to flow in one direction only. The forward bias voltage of the 1N5397-E3/54 is typically between 0.8 to 0.9 volts, making it suitable for use in most modern circuitry.In addition to the low forward voltage drop and high switching frequency, the 1N5397-E3/54 also has a low leakage current, which is typically in the sub-microampere range. This makes it suitable for use in applications where low power consumption is important.Overall, the 1N5397-E3/54 is a great choice for a wide range of applications, including power management, consumer electronics, and switching applications. Its low forward voltage drop, high switching frequency, and low leakage current make it a great choice in high performance applications.
The specific data is subject to PDF, and the above content is for reference
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