
Allicdata Part #: | 1N5527B(DO35)-ND |
Manufacturer Part#: |
1N5527B (DO35) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 7.5V 500MW DO35 |
More Detail: | Zener Diode 7.5V 500mW ±5% Through Hole DO-35 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 7.5V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 35 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 6.8V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
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Diodes are electronic components that allow electrons to flow in one direction, while blocking or clamping the flow of electrons in the opposite direction. Zener diodes, in particular, are a type of diode that have a highly reverse-biased junction and are used for noise reduction and voltage regulation. The 1N5527B (DO35) is a type of Zener diode typically used in power regulating circuits where horizontal and vertical stabilizing voltages are necessary, such as in video output stages.
The 1N5527B (DO35) is a single Zener diode, typically made from silicon, having a 3-terminal anode, cathode, and gate. The anode is the positive end, which usually has more impurities, while the cathode is the negative end. A gate, which allows electrons to flow, is located between the anode and the cathode and is made of a semiconductor material.
The main purpose of the 1N5527B (DO35) is to regulate the voltage that is applied to the system. It can serve as a clamping or limiting device, preventing the voltage across it from exceeding a certain amount. This allows systems using it to operate safely, as damage to components can be prevented. In addition, the device can be used to ensure that the input voltage stays within certain limits.
The operation of the 1N5527B (DO35) Zener diode is based on the principle of a junction diode. The diode consists of two layers of different types of semiconductor material. When a reverse-biased voltage is applied, the electrons present in the area between the anode and the cathode move towards the cathode, creating a depletion region. This depletion region then prevents the flow of current in the opposite direction, as it acts as an insulating layer.
The main characteristic of the 1N5527B (DO35) is its breakdown voltage. This is the voltage at which the diode begins to break down and the current through it begins to increase. The breakdown voltage is typically the same as the Zener voltage, which is listed in the datasheet that accompanies the diode. The Zener voltage can be adjusted with resistors or other components, allowing users to adjust the breakdown voltage of the device.
In addition to its use in voltage regulation systems, the 1N5527B (DO35) can also be used as a temperature sensor and as an optoelectronic device. It can be used as a temperature sensor by connecting a thermistor to the diode, which will then sense the temperature of the environment. In an optoelectronic device, the diode acts as an photodiode, converting light energy directly into electricity.
The 1N5527B (DO35) is a versatile Zener diode that can be used in a variety of applications, from power controlling circuits to temperature sensing and optoelectronic devices. It is made from a reliable base material and has a fixed breakdown voltage that can be adjusted with external components. It is an excellent choice for those looking for a reliable, efficient diode for their circuit designs.
The specific data is subject to PDF, and the above content is for reference
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