1N5537B

Series:	--
Packaging:	Bulk
Part Status:	Active
Voltage - Zener (Nom) (Vz):	17V
Tolerance:	±5%
Power - Max:	500mW
Impedance (Max) (Zzt):	104 Ohms
Current - Reverse Leakage @ Vr:	10nA @ 15.3V
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	DO-35

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1N5537B Diodes - Zener - Single Application Field and Working Principle

The 1N5537B diode is a silicon-based Zener diode capable of consistently producing breakdown voltages as low as 5.6 volts. It utilizes a Zener barrier which is made up of a layer of heavily doped P-type diffusion material and a layer of N-type diffusion material. This diode is used in electronics to protect certain components from damage caused by voltage spikes or voltage surges.

1N5537B Application Field

The 1N5537B can be used to protect a variety of components against adverse voltage conditions, including semiconductor devices such as transistors, thyristors, and triacs. In many cases, the 1N5537B is used as a clipper diode to protect components in circuits that use alternating current (AC) power. This diode also has a regulatory function which is to prevent overvoltage conditions in the circuit. The 1N5537B diode is widely used in industrial, commercial, and consumer electronics. In industrial applications, it is used to protect devices from EMI or electromagnetic interference. In consumer electronics, the 1N5537B is used to protect devices from voltage surges.

1N5537B Working Principle

When an electric current passes through the 1N5537B diode, it produces a precisely predictable breakdown voltage level. This breakdown voltage is determined by the junction temperature, as well as by the accurately controlled doping of the P and N regions of the diode. As the applied voltage reaches the breakdown voltage level, the current traveling through the diode increases at a very steep rate. This is the mechanism behind the 1N5537B\'s protective capability.When the 1N5537B is in its breakdown region, the electrons and holes of the P-type and N-type layers combine to form electron-hole pairs. This creates an avalanche breakdown, caused by the rapid increase in electric field intensity. This breakdown produces a sharp increase in current and a corresponding decrease in voltage. The sudden drop in voltage prevents avalanche current from overwhelming downstream devices.The 1N5537B diode is a valuable component for many manufacturers. It combines the advantages of a Zener diode with those of an avalanche breakdown device, and it is widely used in the production of electronic equipment due to its consistent and reliable performance.

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