Allicdata Part #: | 1N5553US-ND |
Manufacturer Part#: |
1N5553US |
Price: | $ 9.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 800V 3A B-MELF |
More Detail: | Diode Standard 800V 3A Surface Mount B, SQ-MELF |
DataSheet: | 1N5553US Datasheet/PDF |
Quantity: | 86 |
1 +: | $ 8.45460 |
10 +: | $ 7.68663 |
100 +: | $ 6.53367 |
500 +: | $ 5.57280 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 9A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 1µA @ 800V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, B |
Supplier Device Package: | B, SQ-MELF |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The 1N5553US is a rectifier diode with silicon PN junction and is used in many devices in commercial and residential settings. It is commonly used as a power rectifier, as a voltage regulator and in other applications.
It is designed to provide a low voltage drop and very low reverse leakage current when reverse biased. The maximum peak and average reverse voltage ratings of the 1N5553US are 400V and 200V, respectively, and its maximum forward current rating is 0.5A.
Application Field
The 1N5553US can be used for a variety of applications. It is commonly used for power rectification and voltage regulation. It is commonly used in AC-DC power supplies and household electronics such as electronic music equipment, computers and other electronic circuits. It can also be used for motor control and other switching applications.
The diode is also used in rectifier circuits where a low resistance path is needed to prevent excess power dissipation. It is also used to develop rectified turned on signals by detecting and amplifying signals, such as in radio receivers. The rectifier can also be used in voltage regulators where a low voltage drop is desired.
Working Principle
The 1N5553US operates on a simple p-n junction diode principle. When forward biased (also called direct conductivity), electrons are attracted to the positive end of the diode while holes are attracted to the negative end. This causes current to flow in one direction only, producing the rectified output voltage.
When the diode is reverse biased, a potential barrier exists which prevents the current from flowing. This creates a reverse blocking capability, allowing it to be used in power supplies to prevent current from flowing back into the AC line. The barrier also creates a low reverse leakage current, allowing it to be used in voltage regulation and other applications.
The 1N5553US can operate in temperature ranges from -55°C to +125°C and is packaged in a TO-202AA, TO-220AB, or SOT-563 package.
Overall, the 1N5553US is a versatile and reliable rectifier diode which can be used in many applications. Its low voltage drop and low reverse leakage current make it an attractive option for power rectification and voltage regulation.
The specific data is subject to PDF, and the above content is for reference
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