
Allicdata Part #: | 1N5804US-ND |
Manufacturer Part#: |
1N5804US |
Price: | $ 8.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 100V 1A D5A |
More Detail: | Diode Standard 100V 1A Surface Mount D-5A |
DataSheet: | ![]() |
Quantity: | 128 |
1 +: | $ 7.37730 |
10 +: | $ 6.70761 |
100 +: | $ 5.70150 |
500 +: | $ 4.86302 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 875mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 1µA @ 100V |
Capacitance @ Vr, F: | 25pF @ 10V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, A |
Supplier Device Package: | D-5A |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes - Rectifiers - Single
The 1N5804US diode is single-phase, ultra-fast recovery, glass-passivated Schottky rectifier with an anode-cathode voltage of 2400V and a maximum surge peak repetitive current of 8A. This type of rectifier is suitable for a wide range of applications such as reverse voltage protection, DC power supplies, automotive electronics, and more.
Application Field
The 1N5804US diode is designed for use in applications such as reverse voltage protection and DC power supplies in automotive electronics, various telecommunications equipment, high speed computing and microprocessor based systems. It can also be used in switching applications and high-voltage and current-commutation circuits.
Working Principle
The 1N5804US rectifier is a Schottky-barrier type of diode. It is primarily a switching device and operates on the principle of minority carrier injection, where it allows only a small number of majority carriers to move through a junction or region by physics. This creates a space charge layer at the junction interface, which eliminates potential breaks and causes the diode to act as a rectifier or protector in a circuit. The minority carriers then conduct current through the device by creating a voltage drop across the junction barrier. This voltage drop is typically what is considered a rectifier.
The advantages of Schottky-barrier diodes include low switching losses and reverse-recovery time, low forward voltage drop, and no reverse currents under most conditions. The disadvantage is a relatively high reverse leakage current, and the Schottky-barrier diode may suffer from reliability problems due to junction degradation over time.
Conclusion
The 1N5804US diode is a type of single-phase, ultra-fast recovery, glass-passivated Schottky rectifier. It is suitable for a wide range of applications due to its medium voltage rating, low forward voltage drop, low switching losses and low reverse-recovery times. The main disadvantage is its relatively high reverse leakage current. The 1N5804US can be found in automotive electronics, telecommunications equipment, high speed computing and microprocessor based systems, and more.
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Part Number | Manufacturer | Price | Quantity | Description |
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1N5803 | Microsemi Co... | 4.0 $ | 1000 | DIODE GEN PURP 75V 1A AXI... |
1N5818-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
1N5820 B0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 20V 3A DO2... |
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1N5822HR0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE SCHOTTKY 40V 3A DO2... |
1N5818-TP | Micro Commer... | 0.04 $ | 1000 | DIODE SCHOTTKY 30V 1A DO4... |
1N5806 | Semtech Corp... | -- | 296 | DIODE GEN PURP 150V 3.3A ... |
1N5816R | Microsemi Co... | 32.42 $ | 1000 | RECTIFIER DIODEDiode |
1N5821RL | ON Semicondu... | -- | 1000 | DIODE SCHOTTKY 30V 3A DO2... |
1N5827R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 30V DO... |
VS-1N5819TR | Vishay Semic... | 0.0 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5828R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 40V DO... |
1N5819 R0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5819HW-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 40V 1A SOD... |
1N5820-E3/54 | Vishay Semic... | -- | 19600 | DIODE SCHOTTKY 20V 3A DO2... |
1N5814 | Microsemi Co... | 32.42 $ | 1000 | DIODE GEN PURP 100V 20A D... |
1N5817 R0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
1N5818-E3/54 | Vishay Semic... | -- | 5500 | DIODE SCHOTTKY 30V 1A DO2... |
1N5822-T | Diodes Incor... | -- | 1000 | DIODE SCHOTTKY 40V 3A DO2... |
1N5818 A0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
1N5820RLG | ON Semicondu... | -- | 4500 | DIODE SCHOTTKY 20V 3A DO2... |
1N5817A-01 | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 20V 1A DO4... |
1N5820-A | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 20V 3A DO2... |
1N5820HA0G | Taiwan Semic... | 0.09 $ | 1000 | DIODE SCHOTTKY 20V 3A DO2... |
1N5834 | GeneSiC Semi... | -- | 1500 | DIODE SCHOTTKY 40V 40A DO... |
1N5819/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5817-E3/54 | Vishay Semic... | 0.06 $ | 16500 | DIODE SCHOTTKY 20V 1A DO2... |
1N5804US | Microsemi Co... | 8.11 $ | 128 | DIODE GEN PURP 100V 1A D5... |
1N5817 BK | Central Semi... | 0.0 $ | 1000 | DIODE SCHOTTKY 20V 1A DO4... |
VS-1N5818TR | Vishay Semic... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
1N5818M-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 1A MEL... |
1N5821-A | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 3A DO2... |
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1N5819HR0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5821HR0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE SCHOTTKY 30V 3A DO2... |
1N5830R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 25V DO... |
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