Allicdata Part #: | 1N5819HW1-7-FDITR-ND |
Manufacturer Part#: |
1N5819HW1-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE SBR 40V 1A SOD123F |
More Detail: | Diode Super Barrier 40V 1A Surface Mount SOD-123F |
DataSheet: | 1N5819HW1-7-F Datasheet/PDF |
Quantity: | 12000 |
Series: | SBR® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Super Barrier |
Voltage - DC Reverse (Vr) (Max): | 40V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 510mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 15ns |
Current - Reverse Leakage @ Vr: | 500µA @ 40V |
Capacitance @ Vr, F: | 30pF @ 10V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123F |
Supplier Device Package: | SOD-123F |
Operating Temperature - Junction: | -55°C ~ 125°C |
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The 1N5819HW1-7-F is a single, miniature Schottky barrier rectifier designed for general-purpose use. It is commonly used for applications such as low-voltage power supplies, AC adapters, inverters, and battery chargers, among others. The device is available in a TO-252 package and features an operating junction temperature range of -55°C to +125°C. The 1N5819HW1-7-F has a reverse voltage rating of up to 70V and a forward current rating of up to 1A.
A Schottky barrier diode is a diode that uses a metal–semiconductor junction instead of a p–n junction as its junction. As such, the Schottky rectifier is also known as a Schottky diode. The Schottky rectifier has several advantages over traditional p–n junction diodes. These include a faster speed of operation, lower forward voltage, and lower forward current.
At its most basic level, a Schottky barrier diode consists of two metal electrodes, the anode and cathode, that are separated by a thin semiconductor layer. When current passes through the diode, the electrons in the semiconductor layer flow from the anode to the cathode, forming a "barrier" between them. This barrier acts as a one-way gate for electrons, allowing current to flow into the anode but blocking current from flowing back out of the cathode.
The 1N5819HW1-7-F is used in circuit designs that require a low forward voltage drop and low power losses. It is frequently used as an efficient Schottky diode switch, as its low forward voltage drop allows for greater power savings. Additionally, its reverse recovery time is fast enough to be used in high-speed applications such as switchmode power supplies and switchmode converters. It is also commonly used in automotive, battery-operated, and portable applications.
The 1N5819HW1-7-F is a versatile device with a wide range of applications where a Schottky diode is needed. Its low forward voltage drop makes it an efficient choice for power supplies and other applications where power savings are important. Additionally, its high forward current rating and fast reverse recovery time make it suitable for a variety of high-speed applications. Overall, the 1N5819HW1-7-F is a reliable and efficient Schottky diode that is suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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1N5822RL | STMicroelect... | -- | 3800 | DIODE SCHOTTKY 40V 3A DO2... |
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1N5819G | ON Semicondu... | -- | 9257 | DIODE SCHOTTKY 40V 1A AXI... |
1N5802 | Microsemi Co... | 6.21 $ | 293 | DIODE GEN PURP 50V 1A AXI... |
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1N5811US | Microsemi Co... | 7.83 $ | 638 | DIODE GEN PURP 150V 3A B-... |
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