| Allicdata Part #: | 1N5829GN-ND |
| Manufacturer Part#: |
1N5829 |
| Price: | $ 9.30 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | GeneSiC Semiconductor |
| Short Description: | DIODE SCHOTTKY 20V 25A DO4 |
| More Detail: | Diode Schottky 20V 25A Chassis, Stud Mount DO-4 |
| DataSheet: | 1N5829 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 8.37340 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 20V |
| Current - Average Rectified (Io): | 25A |
| Voltage - Forward (Vf) (Max) @ If: | 580mV @ 25A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 2mA @ 20V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Chassis, Stud Mount |
| Package / Case: | DO-203AA, DO-4, Stud |
| Supplier Device Package: | DO-4 |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Base Part Number: | 1N5829 |
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1N5829 diode is part of a family of devices known as switching rectifiers. These devices are different from other types of rectifiers because they can be switched on or off in order to control the direction of current flow. This makes them useful for power supply design, providing a convenient way to change the output voltage or current.
The 1N5829 is a type of switching diode, sometimes called a Schottky diode. This is because it uses a Schottky barrier, which is formed at the junction of metal and semiconductor material. This has several advantages over traditional metal-oxide rectifiers, including lower forward voltage drop, faster switching speeds, and lower reverse leakage current.
The 1N5829 is a single rectifier diode, meaning it consists of a single p-n junction. The diode has anode and cathode terminals, with the anode connected to the metal plate and the cathode connected to the semiconductor material. The direction of current flow is determined by the polarity of the voltage applied to the diode, with current flowing in the direction of the anode if the voltage is positive.
In its typical application, the 1N5829 diode is used to rectify AC (alternating current) signals, such as those found in power supplies. The device works by allowing only certain parts of the AC waveform to pass through, depending on the applied voltage. For example, if a positive voltage is applied, then the positive portions of the AC waveform will be allowed to pass, while the negative portions will be blocked. The result is a DC (direct current) waveform, which can then be used in various ways.
In addition to rectifying AC signals, the 1N5829 diode can also be used as a switch. This is achieved by applying a voltage to the anode terminal which is greater than the voltage to the cathode. This will cause current to flow through the diode, so that it acts as an “on” switch. By reversing the voltage, the diode can be switched “off”.
In addition to its power supply applications, the 1N5829 is also commonly used in RF (radio frequency) devices, as a way to control the amplitude of the transmitted signal. The device provides an efficient way to modulate the signals, allowing the user to control the strength of the transmission.
The 1N5829 diode is an excellent choice for a variety of applications. Its fast switching speeds, low forward voltage drop, and low reverse leakage current make it ideal for power supply and RF designs. In addition, its versatile nature, as both a rectifier and a switch, make it a popular choice for a variety of designs.
In conclusion, the 1N5829 is a versatile, efficient, and reliable switching rectifier diode that can be used for a variety of designs. Its ability to quickly switch on or off and its low forward voltage drop make it ideal for power supply and RF designs. By controlling the voltage applied to the diode, the user can easily switch the device between a rectifier and a switch.
In summary, the 1N5829 is a single rectifier diode with excellent properties that make it an excellent choice for power supply, RF, and other applications requiring controlled current flow. Its Schottky barrier design increases efficiency by providing fast switching speeds, low forward voltage drop, and low reverse leakage current. By controlling the voltage across the diode, the user can switch between rectification and switching modes, making the 1N5829 a versatile and reliable choice for a variety of designs.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N5822-E3/54 | Vishay Semic... | -- | 5600 | DIODE SCHOTTKY 40V 3A DO2... |
| 1N5821-T | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 3A DO2... |
| 1N5820G | ON Semicondu... | -- | 1890 | DIODE SCHOTTKY 20V 3A DO2... |
| 1N5819HW1-7-F | Diodes Incor... | -- | 12000 | DIODE SBR 40V 1A SOD123FD... |
| 1N5827 | GeneSiC Semi... | -- | 1000 | DIODE SCHOTTKY 30V 15A DO... |
| 1N5826R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 20V DO... |
| 1N5833 | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY 30V 40A DO... |
| 1N5819-E3/53 | Vishay Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
| 1N5832 | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY 20V 40A DO... |
| 1N5820-TP | Micro Commer... | 0.08 $ | 1000 | DIODE SCHOTTKY 20V 3A DO2... |
| 1N5802 | Microsemi Co... | 6.21 $ | 293 | DIODE GEN PURP 50V 1A AXI... |
| VS-1N5817 | Vishay Semic... | 0.0 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
| 1N5817HB0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
| 1N5831R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 35V DO... |
| 1N5821RL | ON Semicondu... | -- | 1000 | DIODE SCHOTTKY 30V 3A DO2... |
| 1N5832R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 20V DO... |
| 1N5819UR-1/TR | Microsemi Co... | 0.0 $ | 1000 | SCHOTTKYDiode Schottky 45... |
| 1N5819-E3/54 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
| 1N5803 | Microsemi Co... | 4.0 $ | 1000 | DIODE GEN PURP 75V 1A AXI... |
| 1N5817M-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 20V 1A MEL... |
| 1N5821-B | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 3A DO2... |
| 1N5806 | Semtech Corp... | -- | 296 | DIODE GEN PURP 150V 3.3A ... |
| 1N5816R | Microsemi Co... | 32.42 $ | 1000 | RECTIFIER DIODEDiode |
| 1N5828R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 40V DO... |
| 1N5820 A0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 20V 3A DO2... |
| 1N5829 | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY 20V 25A DO... |
| 1N5831 | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY 35V 25A DO... |
| 1N5819 TR | Central Semi... | 0.0 $ | 1000 | DIODE SCHOTTKY 40V 1A DO4... |
| 1N5818-B | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 1A DO4... |
| 1N5817 A0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
| 1N5820-B | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 20V 3A DO2... |
| 1N5806/TR | Microsemi Co... | 0.0 $ | 1000 | UFR,FRRDiode Standard 150... |
| 1N5829R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 20V DO... |
| 1N5818RLG | ON Semicondu... | -- | 10000 | DIODE SCHOTTKY 30V 1A AXI... |
| 1N5817-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
| 1N5811US/TR | Microsemi Co... | 0.0 $ | 1000 | UFR,FRRDiode Standard 150... |
| 1N5827R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 30V DO... |
| VS-1N5819TR | Vishay Semic... | 0.0 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
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1N5829 Datasheet/PDF