1N5809US Discrete Semiconductor Products |
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| Allicdata Part #: | 1N5809US-ND |
| Manufacturer Part#: |
1N5809US |
| Price: | $ 7.83 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE GEN PURP 100V 3A B-MELF |
| More Detail: | Diode Standard 100V 3A Surface Mount B, SQ-MELF |
| DataSheet: | 1N5809US Datasheet/PDF |
| Quantity: | 218 |
| 1 +: | $ 7.11270 |
| 10 +: | $ 6.40017 |
| 100 +: | $ 5.26226 |
| 500 +: | $ 4.40890 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 875mV @ 4A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 30ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 100V |
| Capacitance @ Vr, F: | 60pF @ 10V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | SQ-MELF, B |
| Supplier Device Package: | B, SQ-MELF |
| Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes – Rectifiers – Single form the most important building blocks for a wide number of power supplies and signal control circuits. The versatile and cost-effective 1N5809US is a reliable and popular choice for a variety of applications. This article will take a look at the 1N5809US application fields and its working principle.
A diode is an electronic device with high resistance to current flow in one direction and low resistance in the opposite direction, used for rectification and signal control. The 1N5809US is a single three-terminal silicon (Si) rectifier diode, indicated by the two dots near the end of the part number. Rectifier diodes are used in power supplies to convert alternating current (AC) to direct current (DC). The 1N5809US has a maximum repetitive peak reverse voltage (VRRM) of 900V, a classical reverse voltage recovery time (trr) of 4µS and a maximum forward voltage (VF) of 1.90V at an average current IF of 5A, but with a maximum peak non-repetitive surge current (IFSM) of 35A.
The typical Diode Symbol (image 1) illustrates how the 1N5809US works. Let\'s break it down by reviewing the function of each symbol. The thin line is the diode\'s anode (marked by A), which is the positive terminal. The larger arrow indicates the current flow (Image 2), with the tip of the arrow pointing towards the diode\'s cathode (marked by K). The cathode is the negative terminal, connected to the other side of the circuit.
The working principle of the 1N5809US is based on the fact that when forward biased, the diode acts as an ideal voltage source and no current flows in the anode. But when reverse biased, the diode acts as a closed switch. If a strong enough electric field is applied between the anode and the cathode, it will bring the electrons from the cathode the anode, allowing current to flow from the anode to the cathode.
The 1N5809US is used in many applications and can be found in a variety of circuits. Its most common application is as a bridge rectifier in high frequency inverters. Additionally, it is used as an alternating-current (AC) line protection diode in AC voltage stabilizers or as a snubber in AC/DC converting applications and power supplies. The 1N5809US can also be used in pulse applications, as a high frequency switching diode in MOSFETs, and in miniaturized, cross-connected transformers to prevent over voltage damage in the connected equipment.
In conclusion, the 1N5809US is an affordable and reliable single three-terminal rectifier diode. It is a versatile device, finding application in various switching power supplies, line protection and snubber circuits. Utilizing its high reverse voltage and current ratings, it is capable of performing pulse and switching applications.
The specific data is subject to PDF, and the above content is for reference
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1N5809US Datasheet/PDF