| Allicdata Part #: | 1N5811TRTR-ND |
| Manufacturer Part#: |
1N5811TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE GEN PURP 150V 6A AXIAL |
| More Detail: | Diode Standard 150V 6A Through Hole |
| DataSheet: |  1N5811TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 150V |
| Current - Average Rectified (Io): | 6A |
| Voltage - Forward (Vf) (Max) @ If: | 875mV @ 4A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 30ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 150V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | B, Axial |
| Supplier Device Package: | -- |
| Operating Temperature - Junction: | -65°C ~ 175°C |
| Base Part Number: | 1N5811 |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
1N5811TR is a type of rectifier diode, more specifically a single rectifier diode. It is designed for use in high-efficiency, low-voltage, full-wave applications. The device is a CMOS (Complementary Metal-Oxide-Semiconductor) diode, making it capable of a far greater switching speed and less power loss than a standard diode. The metal-oxide-semiconductor (MOS) construction is also able to withstand higher temperatures than many other types of rectifiers.The 1N5811TR is typically used to reverse the flow of current in an electrical circuit. This is done by creating a barrier of electrical potential between two points in the circuit, allowing current to only travel in one direction and preventing it from passing through in the opposite direction. This function is useful in a number of applications, such as regulating flow, increasing efficiency, and controlling voltage.The 1N5811TR is composed of three layers of semiconductor material. The first layer is an oxide layer, which acts as an insulator and prevents current from passing through it. The second layer is a thin n-type semiconductor layer, which is the area of the diode that is electrically connected to the positive terminal of the circuit. The third layer is a p-type semiconductor layer, which is connected to the negative terminal of the circuit.When no voltage is connected to the diode, the current that passes through it will be minimal. However, when a voltage is applied to the device, the thin n-type layer becomes positively charged and causes the p-type layer to become negatively charged. This creates a barrier of electrical potential between the two layers, thus creating a rectifying effect that allows current to flow only in one direction.The 1N5811TR can be used in a variety of applications, such as low-voltage AC to DC converters, rectifiers, alternators, and photovoltaic arrays. As a low-voltage rectifier, it is ideally suited for use in applications such as solar arrays, LED lighting systems, and portable electronic devices. It is also capable of switching between AC and DC, allowing for easy integration of multiple types of power sources.In addition to its rectifying capabilities, the 1N5811TR is also able to operate at much higher temperatures than traditional rectifiers. This makes it suitable for use in high-efficiency, power-regulated applications, such as in automotive and aerospace industries.Overall, the 1N5811TR is a versatile device that has a number of applications in various fields. It is capable of regulating and rectifying current, switching between AC and DC, and operating at high temperatures. Its direct-connect feature also makes it easy to integrate into existing systems, making it a popular choice for many power-regulation and rectifying needs.
The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "1N58" Included word is 38
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N5822-E3/54 | Vishay Semic... | -- | 5600 | DIODE SCHOTTKY 40V 3A DO2... |
| 1N5821-T | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 3A DO2... |
| 1N5820G | ON Semicondu... | -- | 1890 | DIODE SCHOTTKY 20V 3A DO2... |
| 1N5819HW1-7-F | Diodes Incor... | -- | 12000 | DIODE SBR 40V 1A SOD123FD... |
| 1N5827 | GeneSiC Semi... | -- | 1000 | DIODE SCHOTTKY 30V 15A DO... |
| 1N5826R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 20V DO... |
| 1N5833 | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY 30V 40A DO... |
| 1N5819-E3/53 | Vishay Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
| 1N5832 | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY 20V 40A DO... |
| 1N5820-TP | Micro Commer... | 0.08 $ | 1000 | DIODE SCHOTTKY 20V 3A DO2... |
| 1N5802 | Microsemi Co... | 6.21 $ | 293 | DIODE GEN PURP 50V 1A AXI... |
| VS-1N5817 | Vishay Semic... | 0.0 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
| 1N5817HB0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
| 1N5831R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 35V DO... |
| 1N5821RL | ON Semicondu... | -- | 1000 | DIODE SCHOTTKY 30V 3A DO2... |
| 1N5832R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 20V DO... |
| 1N5819UR-1/TR | Microsemi Co... | 0.0 $ | 1000 | SCHOTTKYDiode Schottky 45... |
| 1N5819-E3/54 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
| 1N5803 | Microsemi Co... | 4.0 $ | 1000 | DIODE GEN PURP 75V 1A AXI... |
| 1N5817M-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 20V 1A MEL... |
| 1N5821-B | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 3A DO2... |
| 1N5806 | Semtech Corp... | -- | 296 | DIODE GEN PURP 150V 3.3A ... |
| 1N5816R | Microsemi Co... | 32.42 $ | 1000 | RECTIFIER DIODEDiode |
| 1N5828R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 40V DO... |
| 1N5820 A0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 20V 3A DO2... |
| 1N5829 | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY 20V 25A DO... |
| 1N5831 | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY 35V 25A DO... |
| 1N5819 TR | Central Semi... | 0.0 $ | 1000 | DIODE SCHOTTKY 40V 1A DO4... |
| 1N5818-B | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 1A DO4... |
| 1N5817 A0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
| 1N5820-B | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 20V 3A DO2... |
| 1N5806/TR | Microsemi Co... | 0.0 $ | 1000 | UFR,FRRDiode Standard 150... |
| 1N5829R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 20V DO... |
| 1N5818RLG | ON Semicondu... | -- | 10000 | DIODE SCHOTTKY 30V 1A AXI... |
| 1N5817-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
| 1N5811US/TR | Microsemi Co... | 0.0 $ | 1000 | UFR,FRRDiode Standard 150... |
| 1N5827R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 30V DO... |
| VS-1N5819TR | Vishay Semic... | 0.0 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
Latest Products
IDW30E65D1
Diodes - General Purpose, Power, Switchi...
PMEG4005AEA/M5X
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
RGP10J-057M3/54
DIODE GEN PURPOSE DO-204ALDiode
1N4004-N-2-2-BP
DIODE GEN PURP 400V 1A DO41Diode Standar...
CPD76X-1N5817-CT
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
JANTXV1N6662US
DIODE GEN PURP 400V 500MA D5ADiode Stand...