Allicdata Part #: | 1N5817BK-ND |
Manufacturer Part#: |
1N5817 BK |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | DIODE SCHOTTKY 20V 1A DO41 |
More Detail: | Diode Schottky 20V 1A Through Hole DO-41 |
DataSheet: | 1N5817 BK Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 20V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 450mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 20V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -65°C ~ 150°C |
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Diodes - Rectifiers - Single
The 1N5817 BK is a type of rectifier diode, a semiconductor device that allows current to flow in one direction while blocking the reverse direction. This type of diode is designed to affect the current and voltage in an electrical circuit. A diode is composed of two regions of an electrical conductor, the anode and the cathode. The anode is positively charged, and the cathode is negatively charged. A common use in direct current (DC) circuits, the diode filters out any alternating current (AC), allowing only the DC component to be connected to the output. It also serves as a voltage regulator, in which the voltage is limited to no more than the forward voltage of the diode.
Application Field
The 1N5817 BK rectifier diode are used where rectification of low level signals is required. It is suitable for unidirectional sampling or clipping circuits and wave shaping, in particular where preserved symmetry, low DC bias and low leakage current are required. It can also be used in DC power supply rectification, bridge circuits, voltage multipliers, temperature measurement, frequency modulation and many other applications.
Working Preinciple
When the anode of the 1N5817 BK is positively charged, the diode becomes forward-biased and allows current to pass through the diode, from cathode to anode. This is known as forward-bias or conduction. The forward-bias voltage drop is typically about 0.7 V for a silicon diode such as this one.
When the anode is negatively charged, the diode is reverse-biased and current does not flow through the diode. In reverse-bias, the diode behaves as an open-circuit. However, due to the occurrence of "reverse-bias leakage," a small current will still flow through the diode in the opposite direction. This leakage current is no more than a few nanoamps, however, and is usually of no consequence.
The 1N5817 BK diode is designed to handle up to 1.0 Amp of continuous current while maintaining stability. It can also withstand a peak reverse voltage up to 40 V, making it suitable for applications where a low-forward voltage drop is desired. The diode has a maximum junction temperature of 150°C and a thermal resistance of 250°C/W.
In summary, the 1N5817 BK is a rectifier diode that can be used in various applications requiring a low forward voltage drop and a low reverse leakage current. It can handle a peak reverse voltage of up to 40 V and a continuous current of 1.0 Amp, making it a very reliable and durable component. Its low thermal resistance makes it ideal for electronic devices operating in hot environments.
The specific data is subject to PDF, and the above content is for reference
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