| Allicdata Part #: | 1N5818-E3/1GI-ND |
| Manufacturer Part#: |
1N5818-E3/1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE SCHOTTKY 30V 1A DO204AL |
| More Detail: | Diode Schottky 30V 1A Through Hole DO-204AL (DO-41... |
| DataSheet: | 1N5818-E3/1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 30V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 550mV @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 1mA @ 30V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AL, DO-41, Axial |
| Supplier Device Package: | DO-204AL (DO-41) |
| Operating Temperature - Junction: | -65°C ~ 125°C |
| Base Part Number: | 1N5818 |
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The 1N5818-E3/1 is a member of the 1N58xx series of Schottky diodes. It is a single, high voltage, general purpose, fast switching, symmetrical rectifier with an operating junction temperature range of -55°C to 150°C. It is produced in a double-ended package and incorporates a mounting hole for easy mounting to a chassis or board. The 1N5818-E3/1 is used in various industrial, commercial, and automotive applications, as well as in high frequency switching. The primary application fields for this device are rectification, AC-DC conversion, and voltage clamping.
The 1N5818-E3/1 is a Schottky diode made from an n-type semiconductor with one p-type semiconductor layer. The device functions as a rectifier diode, meaning that it allows current to flow in one direction only, from anode to cathode. The device also has a low forward voltage drop, making it particularly suitable for high frequency applications. Additionally, the diode has a low dissipation factor and fast switching capabilities, making it a popular choice for high frequency switching.
The working principle of a 1N5818-E3/1 is based on the Schottky Junction. In a Schottky junction, a metal is deposited on an n-type semiconductor, forming a barrier between the n-type and p-type semiconductor layers. When a potential is applied across the junction, electrons from the n-type material flow into the metal, creating a potential barrier, whilst holes from the p-type material flow out of the metal, creating a separate potential barrier. As a result, the junction behaves like a low resistance path, allowing current to flow in only one direction.
This Schottky diode is typically used for rectification, AC-DC conversion and voltage clamping, providing a low heat dissipation and fast switching. Additionally, it has a low forward voltage drop, making it suitable for high frequency applications. Furthermore, the device features a low capacitance, low dissipation factor, and high repetitive peak forward current, making it a good choice for applications requiring high frequency switching.
Overall, the 1N5818-E3/1 is a Schottky diode that is suitable for various industrial, commercial, and automotive applications. It is a single, high voltage, general purpose, fast switching, symmetrical rectifier with an operating junction temperature range of -55°C to 150°C. It is used in rectification, AC-DC conversion, and voltage clamping, providing a low heat dissipation and fast switching capabilities.
The specific data is subject to PDF, and the above content is for reference
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1N5818-E3/1 Datasheet/PDF