
Allicdata Part #: | 641-1466-3-ND |
Manufacturer Part#: |
1N5819-G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Comchip Technology |
Short Description: | DIODE SCHOTTKY 40V 1A DO41 |
More Detail: | Diode Schottky 40V 1A Through Hole DO-41 |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.03718 |
10000 +: | $ 0.03160 |
25000 +: | $ 0.02974 |
50000 +: | $ 0.02788 |
125000 +: | $ 0.02478 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 600mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 40V |
Capacitance @ Vr, F: | 110pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | 1N5819 |
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Diodes are widely used in electric circuits as components that control the direction and flow of electricity within a circuit. The most common use of a diode is as a rectifier, a device for converting alternating current (AC) to direct current (DC). One of the most popular rectifiers used today is the 1N5819-G, which is a single-phase 5A rectifier diode. This article will explain the application field and working principle of 1N5819-G.
The 1N5819-G has a wide range of applications in consumer electronics, consumer appliances, and automotive electronics, to name a few. With a peak repetitive reverse voltage of 50V, the 1N5819-G rectifier diode can be used in switching power supplies, free-wheeling and snubber circuits, as well as protecting against voltage transients. The 1N5819-G diode is also a good choice for use in an AC-DC converter or an inductive energy storage system, where its compact size and ability to handle high current pulses offers a distinct advantage over other rectifiers.
The 1N5819-G rectifier diode works on a simple principle known as the PN junction. When a PN junction is formed between two semiconductor materials, a built-in potential is generated across the junction. This potential, known as the barrier potential, is created by the movement of charge carriers (electrons and holes) when a forward bias is applied to the diode. When the forward bias reaches above the barrier potential, charge carriers move from the N to the P side of the junction, creating a flowing current across the junction. Internally, the 1N5819-G rectifier diode acts as a one-way valve for electricity, allowing current to flow in one direction only.
In summary, the 1N5819-G rectifier diode is the perfect choice for a wide range of applications, such as AC-DC converters and inductive energy storage systems. It works on the simple PN junction principle, acting as a one-way valve for electricity and allowing current to flow in one direction only. The 1N5819-G has a peak repetitive reverse voltage of 50V and can handle high current pulses with ease, making it a powerful and versatile rectifier diode.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
1N5819-E3/54 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5803 | Microsemi Co... | 4.0 $ | 1000 | DIODE GEN PURP 75V 1A AXI... |
1N5818-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
1N5820 B0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE SCHOTTKY 20V 3A DO2... |
1N5806E3/TR | Microsemi Co... | 0.0 $ | 1000 | UFR,FRRDiode Standard 150... |
1N5829R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 20V DO... |
1N5822HR0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE SCHOTTKY 40V 3A DO2... |
1N5818-TP | Micro Commer... | 0.04 $ | 1000 | DIODE SCHOTTKY 30V 1A DO4... |
1N5806 | Semtech Corp... | -- | 296 | DIODE GEN PURP 150V 3.3A ... |
1N5816R | Microsemi Co... | 32.42 $ | 1000 | RECTIFIER DIODEDiode |
1N5821RL | ON Semicondu... | -- | 1000 | DIODE SCHOTTKY 30V 3A DO2... |
1N5827R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 30V DO... |
VS-1N5819TR | Vishay Semic... | 0.0 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5828R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 40V DO... |
1N5819 R0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5819HW-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 40V 1A SOD... |
1N5820-E3/54 | Vishay Semic... | -- | 19600 | DIODE SCHOTTKY 20V 3A DO2... |
1N5814 | Microsemi Co... | 32.42 $ | 1000 | DIODE GEN PURP 100V 20A D... |
1N5817 R0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
1N5818-E3/54 | Vishay Semic... | -- | 5500 | DIODE SCHOTTKY 30V 1A DO2... |
1N5822-T | Diodes Incor... | -- | 1000 | DIODE SCHOTTKY 40V 3A DO2... |
1N5818 A0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
1N5820RLG | ON Semicondu... | -- | 4500 | DIODE SCHOTTKY 20V 3A DO2... |
1N5817A-01 | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 20V 1A DO4... |
1N5820-A | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 20V 3A DO2... |
1N5820HA0G | Taiwan Semic... | 0.09 $ | 1000 | DIODE SCHOTTKY 20V 3A DO2... |
1N5834 | GeneSiC Semi... | -- | 1500 | DIODE SCHOTTKY 40V 40A DO... |
1N5819/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5817-E3/54 | Vishay Semic... | 0.06 $ | 16500 | DIODE SCHOTTKY 20V 1A DO2... |
1N5804US | Microsemi Co... | 8.11 $ | 128 | DIODE GEN PURP 100V 1A D5... |
1N5817 BK | Central Semi... | 0.0 $ | 1000 | DIODE SCHOTTKY 20V 1A DO4... |
VS-1N5818TR | Vishay Semic... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
1N5818M-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 1A MEL... |
1N5821-A | Diodes Incor... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 3A DO2... |
1N5806C.TR | Semtech Corp... | 2.54 $ | 500 | DIODE GEN PURP 150V 2.5A ... |
1N5819HR0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5821HR0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE SCHOTTKY 30V 3A DO2... |
1N5830R | GeneSiC Semi... | 9.3 $ | 1000 | DIODE SCHOTTKY REV 25V DO... |
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