1N5819-G Allicdata Electronics
Allicdata Part #:

641-1466-3-ND

Manufacturer Part#:

1N5819-G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Comchip Technology
Short Description: DIODE SCHOTTKY 40V 1A DO41
More Detail: Diode Schottky 40V 1A Through Hole DO-41
DataSheet: 1N5819-G datasheet1N5819-G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.03718
10000 +: $ 0.03160
25000 +: $ 0.02974
50000 +: $ 0.02788
125000 +: $ 0.02478
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: 1N5819
Description

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Diodes are widely used in electric circuits as components that control the direction and flow of electricity within a circuit. The most common use of a diode is as a rectifier, a device for converting alternating current (AC) to direct current (DC). One of the most popular rectifiers used today is the 1N5819-G, which is a single-phase 5A rectifier diode. This article will explain the application field and working principle of 1N5819-G.

The 1N5819-G has a wide range of applications in consumer electronics, consumer appliances, and automotive electronics, to name a few. With a peak repetitive reverse voltage of 50V, the 1N5819-G rectifier diode can be used in switching power supplies, free-wheeling and snubber circuits, as well as protecting against voltage transients. The 1N5819-G diode is also a good choice for use in an AC-DC converter or an inductive energy storage system, where its compact size and ability to handle high current pulses offers a distinct advantage over other rectifiers.

The 1N5819-G rectifier diode works on a simple principle known as the PN junction. When a PN junction is formed between two semiconductor materials, a built-in potential is generated across the junction. This potential, known as the barrier potential, is created by the movement of charge carriers (electrons and holes) when a forward bias is applied to the diode. When the forward bias reaches above the barrier potential, charge carriers move from the N to the P side of the junction, creating a flowing current across the junction. Internally, the 1N5819-G rectifier diode acts as a one-way valve for electricity, allowing current to flow in one direction only.

In summary, the 1N5819-G rectifier diode is the perfect choice for a wide range of applications, such as AC-DC converters and inductive energy storage systems. It works on the simple PN junction principle, acting as a one-way valve for electricity and allowing current to flow in one direction only. The 1N5819-G has a peak repetitive reverse voltage of 50V and can handle high current pulses with ease, making it a powerful and versatile rectifier diode.

The specific data is subject to PDF, and the above content is for reference

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