1N5830R

Series:	--
Packaging:	Bulk
Part Status:	Active
Diode Type:	Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max):	25V
Current - Average Rectified (Io):	25A
Voltage - Forward (Vf) (Max) @ If:	580mV @ 25A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	2mA @ 20V
Capacitance @ Vr, F:	--
Mounting Type:	Chassis, Stud Mount
Package / Case:	DO-203AA, DO-4, Stud
Supplier Device Package:	DO-4
Operating Temperature - Junction:	-55°C ~ 150°C
Base Part Number:	1N5830R

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Introduction to 1N5830R

The 1N5830R is a single, fast switching Schottky diode which is designed to operate at very high speeds with very low forward voltage drop. The 1N5830R is a highly efficient device which is suitable for use in a wide range of applications including rectification and protection circuits. This diode is designed for operation with high temperature reliability and offers a maximum surge current rating of 15 A.

Application of 1N5830R

The 1N5830R is primarily used in high frequency rectification applications and can be applied in a wide range of applications such as power supplies, DC/DC converters, switched mode power supplies, high-efficiency reverse polarity circuitry and bridge rectifier circuits. The low forward voltage drop of the 1N5830R makes it ideal for applications which require the efficient transfer of power. This diode can be used in circuits operating at frequencies up to 2 MHz and is able to deliver a peak pulse current of 2 A.The high current handling capability of the 1N5830R also makes it an ideal choice for automotive and battery applications. The 1N5830R can be used to protect microprocessor-controlled systems from short circuiting and high voltage surges. It can also be used to provide over-voltage protection for sensitive circuits and is suitable for rectifying low to medium voltage sources.

Working Principle of 1N5830R

The 1N5830R diode can be operated at high frequencies due to its low forward voltage drop. This diode works on the principle of "Drift and Diffusion" where electrons drift in an electric field and diffusion occurs when electrons interact with atoms in the diode. The forward voltage drop of the 1N5830R is as low as 0.16V which makes it suitable for high frequency rectification applications.When the anode is positive with respect to the cathode, the diode forward bias junction is forward biased and current passes through the diode. Conversely, when the anode is negative with respect to the cathode, the diode reverse bias junction is reverse biased and current does not pass through the diode. This process is known as "rectification" and it is the most important function of the 1N5830R diode.The 1N5830R also offers a high level of protection from short circuiting and high voltage surges due to its fast recovery time and its ability to handle large reverse voltage spikes. The diode is also RoHS compliant and is designed for operation at a temperature range of up to 150°C.

Conclusion

In conclusion, the 1N5830R is a single, fast switching Schottky diode which is designed for use in high frequency rectification and protection applications. The 1N5830R offers high reverse voltage protection, low forward voltage drop and high surge current rating, making it ideal for a variety of applications. The 1N5830R also has a fast recovery time and is RoHS compliant, making it suitable for use in automotive and battery applications.

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