
Allicdata Part #: | 1N5915BUR-1-ND |
Manufacturer Part#: |
1N5915BUR-1 |
Price: | $ 3.24 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 3.9V 1.25W DO213AB |
More Detail: | Zener Diode 3.9V 1.25W ±5% Surface Mount DO-213AB |
DataSheet: | ![]() |
Quantity: | 1000 |
233 +: | $ 2.91554 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 3.9V |
Tolerance: | ±5% |
Power - Max: | 1.25W |
Impedance (Max) (Zzt): | 7.5 Ohms |
Current - Reverse Leakage @ Vr: | 25µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF |
Supplier Device Package: | DO-213AB |
Base Part Number: | 1N5915 |
Description
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Introduction: 1N5915BUR-1 is a single Zener diode which is used in various electronic applications. It is a low voltage diode with a zener voltage of 3.3V and a power handling capacity of 150mW. The diode has very low forward voltage drop of 0.25V as well as very low reverse current leakage of 18µA.Application Field:1N5915BUR-1 is ideal for use in applications such as voltage regulation and voltage suppression. It is used in automotive, medical and industrial equipment where low voltage voltage regulation is necessary. It is also used in switches, TV and game consoles and other consumer electronics products where protection against overvoltage and undershoot is necessary.Working Principle:The working principle of 1N5915BUR-1 is based on the zener effect. When a zener diode is reverse biased, it experiences a large voltage difference across its ends. This causes the depletion layer in the diode to widen and acts as a barrier for current flow within the diode. The amount of current that is allowed to pass through the diode is determined by the amount of voltage that is applied across it.When a voltage lower than the breakdown voltage of the diode is applied, the diode remains in its normal conducting state. But when a voltage higher than the breakdown voltage is applied, the diode starts operating in its zener mode. The zener breakdown voltage is determined by the doping profile of the diode and is generally higher than the ordinary breakdown voltage.When the zener breakdown voltage is reached, the diode enters a state of avalanche breakdown and exhibits a negative resistance region. In this region, the current passing through the diode increases in an exponential manner until it reaches a maximum value. This is known as the Zener knee voltage and is dependent on the doping profile of the diode.The zener diode operates in its zener knee voltage for a wide range of modulation voltages. This makes it ideal for use in applications such as voltage regulation and voltage suppression. The diode’s negative resistance region allows it to absorb any high voltage spikes and protect the equipment from any damage caused by them.Conclusion:In conclusion, 1N5915BUR-1 is a low voltage diode used in various electronic applications such as voltage regulation and voltage suppression. The diode works on the principle of zener knee voltage and operates in its negative resistance region allowing it to absorb any high voltage spikes. The diode is ideal for use in automotive, medical and industrial equipment where low voltage voltage regulation is necessary.The specific data is subject to PDF, and the above content is for reference
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