1N5951E3/TR13 Allicdata Electronics
Allicdata Part #:

1N5951E3/TR13-ND

Manufacturer Part#:

1N5951E3/TR13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 120V 1.5W DO204AL
More Detail: Zener Diode 120V 1.5W ±20% Through Hole DO-204AL (...
DataSheet: 1N5951E3/TR13 datasheet1N5951E3/TR13 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 120V
Tolerance: ±20%
Power - Max: 1.5W
Impedance (Max) (Zzt): 380 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 91.2V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 1N5951
Description

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Introduction to the 1N5951E3/TR13

The 1N5951E3/TR13 is a Zener diode designed and manufactured by ON Semiconductor. It is a single zener diode with a maximum reverse voltage of 600V and a maximum power dissipation of 13W. This diode is mainly used to create a zener breakdown and protect circuits from unnecessarily high voltages.

Applications

The 1N5951E3/TR13 diode is mainly used to protect circuits from excessive voltages. It can be used for protection from short circuit failures and for voltage source isolation. Other applications for the 1N5951E3/TR13 include surge protection, low voltage clamping, and voltage referencing. It is commonly used in AC/DC converters, power supply, motor drivers, and motor control circuits.

Working Principle

The working principle behind the 1N5951E3/TR13 diode is based on the Zener breakdown. Zener breakdown occurs when the applied reverse voltage reaches the Zener voltage, which is smaller than the breakdown voltage. It is the result of a flow of electrons through a very thin depletion layer which is formed at the junction of the P-type and N-type region of the diode. This leads to resistance or avalanche breakdown which is basically a tunneling effect. When this breakdown occurs, a large current is allowed to flow through the diode, which can be used to protect other components in the circuit. This current is called a Zener breakdown current. The maximum Zener current of the 1N5951E3/TR13 is 90mA while the Zener voltage is between 600V and 800V.

Conclusion

The 1N5951E3/TR13 is a single Zener diode manufactured by ON Semiconductor. It has a maximum reverse voltage of 600V and a maximum power dissipation of 13W. It can be used for applications such as voltage clamping, surge protection, voltage referencing, and more. Its working principle based on Zener breakdown, which is a tunneling effect caused by a flow of electrons through a very thin depletion layer.

The specific data is subject to PDF, and the above content is for reference

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