1N5918E3/TR13

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	5.1V
Tolerance:	±20%
Power - Max:	1.5W
Impedance (Max) (Zzt):	4 Ohms
Current - Reverse Leakage @ Vr:	5µA @ 2V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Base Part Number:	1N5918

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1N5918E3/TR13 application field and Working Principle

Diodes are electrical components that mainly allow a current to pass in one direction and restrict current flow in the opposite direction. Zener diodes are specially designed to create a voltage drop across a junction of two materials that is significantly higher than the usual breakdown voltage of the zener diode. Zener diodes often feature a low forward voltage drop, small reverse leakage current, and superior high temperature stability. Single diodes are discrete electro-mechanical components with only two terminals- a cathode and an anode.The 1N5918E3/TR13 is a single Zener diode with a low capacitance of 1.5 pF, manufactured by NXP Semiconductors. It has a voltage rating of 5.6V and a power dissipation of 500mW. With its wide emission angle, no minimum order quantity, and compact package size, it is suitable for a variety of applications.The 1N5918E3/TR13 is mainly used in telecommunications applications, such as in landline and cellular communication networks. The device can be used to clamp the voltage of a signal line to a safe level. When a signal is sent down a wire, the signal may become distorted as it travels. The 1N5918E3/TR13 clamps the voltage to protect the wire from an overpowering signal. In addition, the device can be used to protect integrated circuits from transients due to lightning strikes or power surges, as well as in video signal transmission.The working principle of the 1N5918E3/TR13 is based on Zener diode characteristics. Zener diodes are heavily doped with two junctions. The anode side of the diode is highly doped with P-type material, while the cathode side is made of N-type material. The N-side is also heavily doped, making it heavily depleted. When no voltage is applied, only a few carriers cross the junction, forming a capacitance that provides a low forward voltage drop. When the voltage exceeds the breakdown voltage, electrons from the P-side start to cross the junction in high numbers, creating a current. This current is limited only by the resistance of the device, ensuring a stable clamping voltage.In conclusion, the 1N5918E3/TR13 is a single Zener diode with a low capacitance and a voltage rating of 5.6V, mainly used in telecommunications applications. Its working principle is based on Zener diode characteristics, wherein current flow is limited only by the resistance of the device when the voltage exceeds the breakdown voltage.

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