1N5923AP/TR12 Allicdata Electronics
Allicdata Part #:

1N5923AP/TR12-ND

Manufacturer Part#:

1N5923AP/TR12

Price: $ 0.97
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 8.2V 1.5W DO204AL
More Detail: Zener Diode 8.2V 1.5W ±10% Through Hole DO-204AL (...
DataSheet: 1N5923AP/TR12 datasheet1N5923AP/TR12 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.87517
Stock 1000Can Ship Immediately
$ 0.97
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 8.2V
Tolerance: ±10%
Power - Max: 1.5W
Impedance (Max) (Zzt): 3.5 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 6.5V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 1N5923
Description

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1N5923AP/TR12 is a Zener diode that is designed for a single application field and has a wide range of working principles. The diode is ideal for protecting circuits from overvoltage due to electrical transients or EMI.

The 1N5923AP/TR12 Zener diode is designed to provide reverse breakdown protection for up to 40V. It has an operating temperature range of -55°C to +125°C and a power dissipation rating of 100 mW. The diode has a high speed switching capability, providing fast response time of less than one microsecond. It features a superior thermal stability with low reverse leakage current. The diode also has a wide dynamic range, which ensures excellent reliability and noise immunity.

The 1N5923AP/TR12 Zener diode works by providing a controlled amount of voltage between the anode and cathode terminals. The diode is designed such that when a voltage is applied to the anode, a certain breakdown voltage will be reached, at which point the diode begins to conduct. This breakdown voltage is used for protection of the device being protected and will be clamped at that level. Due to this, a rapid increase in voltage or overvoltage will be limited to the breakdown value, preventing damage to the device.

The working principle of the 1N5923AP/TR12 Zener diode is based on the PN junction principle, where a PN junction is formed between the anode and cathode terminals. When a voltage is applied to the anode, the diode current will increase due to the junction barrier potential. At some value, the current will pass through the diode, providing the desired clamping action. This breakdown voltage is usually much lower than the voltage applied to the anode, thus providing the necessary protection.

The 1N5923AP/TR12 Zener diode can be used in many applications, such as protection of sensitive circuits from overvoltage, electrical transients, or EMI. It can also be used for voltage regulation and as a temperature compensator in some applications. It is widely used in power supply circuits, DC-DC converters, and microcontrollers, providing the necessary protection and regulation of current and voltage.

The 1N5923AP/TR12 Zener diode is a robust device that is designed to provide reliable protection and voltage regulation at a low cost. It is also a low power and low voltage device, making it an excellent choice for many applications. It is also a very reliable and efficient device, providing the necessary protection and voltage control.

The specific data is subject to PDF, and the above content is for reference

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