1N5923CE3/TR13

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	8.2V
Tolerance:	±2%
Power - Max:	1.5W
Impedance (Max) (Zzt):	3.5 Ohms
Current - Reverse Leakage @ Vr:	5µA @ 6.5V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Base Part Number:	1N5923

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Diodes - Zener - Single 1N5923CE3/TR13 Application Field and Working Principle

The 1N5923CE3/TR13 (PN 5923CE3) is a single Zener diode designed to regulate the voltage within a wide range of applications. It features a low-voltage rating of just 1.2 volts, making it ideal for protecting sensitive electronics, such as microprocessors and memory chips, from overvoltage. This diode is also suitable for low-power applications.The 1N5923CE3/TR13 is a symbol in a series of single Zener diodes that adheres to JEDEC standards, meaning the devices are all produced with the same manufacturing processes so as to ensure quality. This device is an ideal choice for circuit designers seeking to use a reliable, cost-effective solution for voltage regulation in a variety of applications, from general purpose to automotive, industrial, telecommunications, and medical applications.The 1N5923CE3/TR13 can be used in various types of applications, including transient voltage suppressors (TVS), current-limiting- and combination circuits, as well as other applications. As the device is highly reliable, it is suitable for use in a variety of circuit designs.The 1N5923CE3/TR13 works by suppressing voltage spikes in a circuit so that the voltage does not exceed a set maximum level. This helps to protect sensitive electronic components from damage by overvoltage, as well as preventing circuit malfunctions. The device works thanks to the differences in voltage between the anode and cathode.The 1N5923CE3/TR13 consists of several components, including a semiconductor body, a diode, and a series of other elements. The diode component of the device is designed to allow electrons to flow through it, while the semiconductor body consists of a substrate, on which a layer of a semiconductor material is deposited.When a reverse voltage is applied to the device, the electrons are forced to flow across the PN junction. This causes a current to flow in the opposite direction, which reduces or eliminates the voltage inequalities across the junction. Additionally, the diode component prevents the current from flowing in the opposite direction, so that it does not cause a potential failure.The 1N5923CE3/TR13 is an ideal choice for circuit designers seeking to protect sensitive components from damage as a result of overvoltage. The device is also suitable for use in a variety of other applications, from consumer to industrial and automotive. Thanks to its low-voltage rating, the device is ideal for applications that require protection from voltage spikes, as the device helps prevent circuit malfunctions and maintains the voltage at a consistent level. By using the 1N5923CE3/TR13 in circuit designs, engineers can create more reliable products, while ensuring the safety of the systems they create.

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