1N5932BE3/TR13

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1N5932BE3/TR13 is a single-junction zener diode. It offers superior reverse breakdown voltage, low dynamic impedance and fast switching speed. With superior junction temperature stability and current handling capabilities, it is suitable for use in many applications.

Applications of 1N5932BE3/TR13 mainly include voltage regulation, voltage clamping, over-voltage protection, over-voltage protection circuits, surge suppression, and rectification. It can be used for both general-purpose and specialized applications.

The 1N5932BE3/TR13’s working principle is based on the reverse breakdown phenomenon. When a certain reverse voltage is applied, the diode can handle high current with low dynamic impedance. This is due to the fact that, when reverse breakdown occurs, the internal resistance of the diode is reduced, resulting in a decrease in dynamic impedance. With the increase in reverse voltage, the zener effect will begin and the current will be clamped at a fixed voltage. This phenomenon is referred to as the zener breakdown voltage.

In addition, the 1N5932BE3/TR13’s superior junction temperature stability makes it suitable for use in even the harshest environments. Its high current handling capabilities, low dynamic impedance and fast switching speed make it a great choice for applications that require a fast response.

The 1N5932BE3/TR13 is an ideal choice for applications that need excellent voltage regulation, over-voltage protection and surge suppression. It is an excellent single-junction zener diode that provides reliable performance and excellent durability.

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