1N5949CPE3/TR12

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Voltage - Zener (Nom) (Vz):	100V
Tolerance:	±2%
Power - Max:	1.5W
Impedance (Max) (Zzt):	250 Ohms
Current - Reverse Leakage @ Vr:	1µA @ 76V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Base Part Number:	1N5949

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< p style="font-size:14px; font-family:\'Times New Roman\'; line-height:1.75em;">Diodes- Zener- Single are semiconductor components that are used in a wide variety of applications. The 1N5949CPE3/TR12 is a single Zener diode capable of providing an increased current handling compared to traditional Zener diodes, as well as low voltage drop at higher current levels. This component is a convenient solution for applications such as voltage clamping, over-voltage protection, polarity protection and ESD protection.

This component is constructed using a small surface mount package, making it suitable for use in a wide range of compact applications. The 1N5949CPE3/TR12 is polished in a hermetic package, containing a semiconductor diode at its heart. The diode is connected to a metal oxide layer, which forms the reverse Shottky barrier with the p-type layer of the diode. The Zener diode is able to regulate high frequency transients and voltage spikes better than traditional Zener diodes due to the hermetic package and the high doping level of the N-type silicon layer.

The 1N5949CPE3/TR12 is capable of operating in any environment and offers a wide range of operating temperature, making it suitable for use in a wide range of applications. The component can withstand a variety of temperatures – from -65°C to +200°C – and it can handle a maximum current of 30mA. The maximum power dissipated by the diode is rated at 1.54 Watts. The component has a high power junction, which is capable of handling a large number of application cycles without damage.

The component is able to regulate current and protect loads from high voltages and excess current by clamping voltage levels. This is done using a reverse breakdown voltage mechanism and a forward voltage drop. The diode is able to efficiently and reliably clamp high voltages and spikes by creating a reverse depletion layer between the cathode and the anode.

The component is also used for over-voltage protection in power supply and voltage regulator circuits. When the voltage exceeds the breakdown voltage of the component, the reverse breakdown voltage clamping mechanism is activated and the excess current is blocked. The component also offers polarity protection and ESD protection by using a rectifying diode and a low capacitance dielectric material. The component is also used to protect sensitive circuits from the effects of ESD.

The 1N5949CPE3/TR12 is thus a versatile and reliable component for use in a wide range of applications. Thanks to its hermetic package, high doping level and low capacitance dielectric material, the component is able to provide several benefits, such as reduction of EMI/RFI, protection from voltage spikes and increased current handling. Its wide range of operating temperatures and its high power junction make it suitable for use in a wide variety of applications.

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