Allicdata Part #: | 1N5949E3/TR13-ND |
Manufacturer Part#: |
1N5949E3/TR13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 100V 1.5W DO204AL |
More Detail: | Zener Diode 100V 1.5W ±20% Through Hole DO-204AL (... |
DataSheet: | 1N5949E3/TR13 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 100V |
Tolerance: | ±20% |
Power - Max: | 1.5W |
Impedance (Max) (Zzt): | 250 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 76V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Base Part Number: | 1N5949 |
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A diode is a semiconductor device composed of two regions, an anode and a cathode. It allows electric current to flow in only one direction and is used in a variety of applications that require rectification or voltage regulation. The 1N5949E3/TR13 diode is a type of Zener single diode. It is specifically designed for voltage-regulator applications, especially for the programming of memories.
The 1N5949E3/TR13 diode is capable of controlling the input/output power supply in motherboard circuits and low-voltage applications. It has a maximum reverse breakdown voltage of 8.5 volts and a maximum operating junction temperature of 175°C. The forward voltage ratings range from 1.2 to 50 volts, and the total power dissipation is rated at 1.2 watts. The package type available is through-hole.
The 1N5949E3/TR13 diode works by using the reverse-bias breakdown effect. A reverse bias is applied to the diode, which increases the electric field intensity around the diode, thus creating a strong electric current. This current is often called a “zener current”, and causes the voltage across the diode (V) to remain constant, regardless of the amount of current flowing through it. This allows the 1N5949E3/TR13 diode to be used for voltage-regulation applications, by setting the breakdown voltage to the desired level.
The 1N5949E3/TR13 diode has several advantages over other voltage regulation methods. It is less expensive than other methods and does not require external components. Additionally, it does not require additional circuitry for operation, and it is able to regulate the input/output power supply over a wide range. Also, the diode is fast, allowing for quick regulation of the power supply.
The 1N5949E3/TR13 diode is used in various applications such as mobile phones, digital displays, LED lighting, LED lighting controllers, charging systems, and voltage monitoring circuits. Additionally, it is used in the programming of digital memory devices, and can be used to regulate energy levels in battery charging systems. The diode is also often used in automotive electronic control systems, thanks to its ability to regulate voltage and current.
In summary, the 1N5949E3/TR13 diode is a type of Zener single diode. It is designed to control the input/output power supply in motherboard circuits and low-voltage applications. It works by using the reverse-bias breakdown effect and is used in a variety of applications such as mobile phones, digital displays, LED lighting, charging systems, and voltage monitoring circuits. It is a low-cost and efficient device.
The specific data is subject to PDF, and the above content is for reference
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