1N5952BUR-1 Allicdata Electronics
Allicdata Part #:

1N5952BUR-1-ND

Manufacturer Part#:

1N5952BUR-1

Price: $ 5.47
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 130V 1.25W DO213AB
More Detail: Zener Diode 130V 1.25W ±5% Surface Mount DO-213AB
DataSheet: 1N5952BUR-1 datasheet1N5952BUR-1 Datasheet/PDF
Quantity: 1000
125 +: $ 4.91959
Stock 1000Can Ship Immediately
$ 5.47
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 130V
Tolerance: ±5%
Power - Max: 1.25W
Impedance (Max) (Zzt): 450 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 98.8V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: DO-213AB
Base Part Number: 1N5952
Description

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The 1N5952BUR-1 is a single Zener diode, and is classified under Diodes - Zener - Single. It has a wide variety of applications and a specific working principle. This article will explain the 1N5952BUR-1 application field and working principle in detail.

The 1N5952BUR-1 is made of silicon which makes it extremely durable. It has a wide variety of applications, including voltage regulators, constant voltage supplies, surge protection and line regulation. It also finds application in low-noise amplifiers, low-voltage detectors, telecommunication instruments, and precision current sources.

The 1N5952BUR-1 is designed to work at a voltage between 5.6 and 9.1 volts, with a total power dissipation of up to 0.5 watts. It has a maximum reverse leakage current of 6 microamps, which makes it very efficient. Additionally, it has a very low forward voltage drop of 0.7 volts, and a low capacitance of about 0.05 pF.

The 1N5952BUR-1 works on the principle of Zener breakdown, where electrical potential is applied across a reverse biased diode in order to form a depletion zone. This zone increases the electric field of the diode, and once it reaches a certain threshold, it causes carriers to flow across the P-N junction, and thus creates a current.

The process of Zener breakdown happens in two stages. In the first stage, carriers are injected into the depletion zone, and this causes a decrease in the electric field at the P-N junction. In the second stage, the electric field of the diode reaches an upper limit, which is known as the Zener voltage. At this voltage, the electric field of the diode is strong enough to cause the carriers to flow across the P-N junction, and thus, the device begins to conduct.

The Zener voltage of the 1N5952BUR-1 is 8.2 volts. This is the voltage at which the device will begin to conduct. It is important to note that the Zener voltage is relatively stable, and it does not change with the application of a voltage. This makes the 1N5952BUR-1 suitable for applications which require a constant voltage.

In conclusion, the 1N5952BUR-1 is a single Zener diode classified under Diodes - Zener - Single. It has a wide variety of applications and works on the principle of Zener breakdown. The device has a Zener voltage of 8.2 volts and will begin to conduct once the applied voltage reaches this voltage.

The specific data is subject to PDF, and the above content is for reference

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