1N5955P/TR12 Allicdata Electronics
Allicdata Part #:

1N5955P/TR12-ND

Manufacturer Part#:

1N5955P/TR12

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 180V 1.5W DO204AL
More Detail: Zener Diode 180V 1.5W ±20% Through Hole DO-204AL (...
DataSheet: 1N5955P/TR12 datasheet1N5955P/TR12 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 180V
Tolerance: ±20%
Power - Max: 1.5W
Impedance (Max) (Zzt): 900 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 136.8V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 1N5955
Description

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The 1N5955P/TR12 is a zener diode from the Single category. This device is a highly reliable, certified 180mW power zener diode, which offers low noise operation, as well as low cost and low power consumption. It has an operating temperature range of -55°C to 125°C and an ambient temperature range of -30°C to 75°C.

This diode is designed to provide stable voltage regulation and reverse blocking in a wide variety of applications. These applications include those in telecommunications, power supplies, audio, video, test and measurement equipment and computer products. It can also be used in automotive applications and in high frequency applications where high voltage protection is required.

1N5955P/TR12 working principle is based on the fact that when reverse biasing voltage is applied to a PN junction, a small current, due to minority charge carriers, continues to flow. If a sufficiently large reverse bias voltage is applied, the amount of minority charge carriers increases and the current flowing through the junction increases. This phenomenon is known as zener breakdown.

The 1N5955P/TR12 is typically used as a voltage regulator in applications where high blocking voltage is required. It has a breakdown voltage of 9.9V and can handle current up to 10 A. It also offers a wide temperature range, low junction capacitance and high insult levels. The diode has a thermal resistance of 0.35°C/W, which ensures that the device can function at a wide range of temperatures without exceeding its maximum power rating.

In addition, 1N5955P/TR12 is also suitable for use in high frequency applications, where the switching speed and frequency can range from kHz to GHz. The device has an insertion loss of less than 0.005 dB at 1 GHz and a frequency range from DC to 5 GHz. Its isolation voltage is 3500 V, which is high enough to protect against noise and transients.

The 1N5955P/TR12 is a reliable diode suitable for a wide variety of applications. It is designed to operate at temperatures ranging from -55°C to 125°C and can handle high blocking voltage and large currents. Its low junction capacitance and high insulation levels make it an ideal choice for switching and high frequency applications, while its wide temperature range makes it suitable for automotive applications as well.

The specific data is subject to PDF, and the above content is for reference

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