1N5956D Allicdata Electronics
Allicdata Part #:

1N5956D-ND

Manufacturer Part#:

1N5956D

Price: $ 4.89
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: ZENER DIODE
More Detail: Zener Diode
DataSheet: 1N5956D datasheet1N5956D Datasheet/PDF
Quantity: 1000
139 +: $ 4.40560
Stock 1000Can Ship Immediately
$ 4.89
Specifications
Series: *
Part Status: Active
Description

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1N5956D is a Zener diode, classified under the category of single diodes, which refers to a single p-n junction. It is often used as an input protection element in the area of RF power amplifier design, due to its wide dynamic range, low noise, and fast turn-on and turn-off times. It can be used as a shunt regulator, stabilizer, or AC+DC converter, but its most popular application is as an electrical/electronic/mechanical load switch, allowing for the control of the ON/OFF status of a particular device or system.

The 1N5956D has a maximum power dissipation of 500 mW, and its peak forward current rating is 150mA, with up to 15 mA of average forward current. The reverse voltage rating of the device is 10-60 volts, and its maximum reverse current rating is 0.5mA. It offers superior breakdown voltage and low leakage current, making it able to efficiently switch between high and low signals.

The Zener diode also features a number of operating temperature ranges, typically between -55 to 125°C. In order to ensure optimal operation, it is important to keep the device within the specified temperature range. Low power losses are also essential for this type of application, and the 1N5956D offers very good efficiency when used in a wide band.

The working principle of the Zener diode is based on the electron tunneling effect, in which the diode is able to emit electrons from one junction to the other. This is because of its p-n junction structure, which allows for electron tunneling to occur. When an applied voltage exceeds the Zener breakdown voltage, electrons are emitted, creating a forward current. This concept is also known as resistive switching, because the current flows through the device in both directions.

The electron tunneling effect is also responsible for producing the high breakdown voltages that the 1N5956D offers. When the applied voltage reaches a certain level, electrons start to tunnel from the anode to the cathode, then recombining into their original form. This process creates a high level of current and results in Zener breakdown.

The 1N5956D is an ideal device for a variety of applications, with its superior breakdown voltage, low leakage current, and wide temperature range ensure its reliable operation. It offers excellent efficiency, making it ideal for use in power amplifier designs, as well as a load switch, AC+DC converter, or other in-circuit applications.

The specific data is subject to PDF, and the above content is for reference

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