| Allicdata Part #: | 1N5998D-ND |
| Manufacturer Part#: |
1N5998D |
| Price: | $ 3.74 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 8.2V 500MW DO35 |
| More Detail: | Zener Diode 8.2V 500mW ±1% Through Hole DO-35 |
| DataSheet: | 1N5998D Datasheet/PDF |
| Quantity: | 1000 |
| 182 +: | $ 3.36538 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 8.2V |
| Tolerance: | ±1% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 7 Ohms |
| Current - Reverse Leakage @ Vr: | 500nA @ 6.5V |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AH, DO-35, Axial |
| Supplier Device Package: | DO-35 |
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The 1N5998D is a high voltage Zener diode. It is commonly used in speaker impedances, voltage amplification and voltage regulation applications, and other related applications. The 1N5998D is designed to protect against large current overloads, and prevent reverse polarity and excessive voltage levels.
Application Field of 1N5998D
The 1N5998D is a high voltage Zener diode which is usually used in field like speaker impedance, voltage amplification, voltage regulation and other related tasks. It is commonly chosen for its high voltage protection feature, which is useful for protecting various consumer electronics from unwanted overvoltages or spikes. The 1N5998D has a breakdown voltage of 6.2V, and can provide up to a rated power of 500mW. It has low leakage current and a very low forward voltage drop. It has a maximum junction temperature of 175°C.
Working Principle of 1N5998D
The 1N5998D is a Zener diode, which works on the principle of avalanche breakdown. It has one PN junction, formed between two layers of doped semiconductor materials. When reverse biasing is applied, the potential barrier of the junction is reduced, and with a large enough voltage, the junction breaks, forming an avalanche of electrons. This process is called the avalanche breakdown effect, and it is what gives the 1N5998D its high voltage protection properties.
Under normal operating conditions, when forward biasing is applied to the 1N5998D, the electrons flow freely from one side of the junction to the other, leading to a small voltage drop. As the current flow increases, the voltage drop increases too, and under a certain amount of current, it reaches the breakdown voltage of the diode. When this happens, the diode will start to act as a voltage regulator and regulate the voltage.
The typical application for the 1N5998D is to protect devices from overvoltage or large current surges. It is able to do this because when its breakdown voltage is exceeded, the diode will start to regulate the voltage and act as a voltage regulator. This can protect devices from damage from excessive voltages and currents.
Conclusion
The 1N5998D is a high voltage Zener diode used in many applications including speaker impedance, voltage amplification, voltage regulation and other related tasks. It has a breakdown voltage of 6.2V and can provide up to a rated power of 500mW. Its working principle is based on the avalanche breakdown effect, which allows it to regulate the voltage when its breakdown voltage is exceeded. This makes it useful for protecting devices from overvoltage and currents. It is also able to provide a low voltage drop and low leakage current, making it highly efficient.
The specific data is subject to PDF, and the above content is for reference
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1N5998D Datasheet/PDF