Allicdata Part #: | 1N6001B_T50R-ND |
Manufacturer Part#: |
1N6001B_T50R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 11V 500MW DO35 |
More Detail: | Zener Diode 11V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N6001B_T50R Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 11V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 18 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 8.4V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N6001 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 1N6001B_T50R diode belongs to the category of single Zener diodes used for electronic devices and components. The diode has many applications, in particular when the ability to handle transient or sustained high current or voltage is necessary. The primary purpose of a Zener diode is to control and regulate the voltages for smooth and stable operation. The 1N6001B_T50R diode is used for voltage legislation and protection. It helps to prevent spikes and over voltage from reaching components with sensitive circuits.
The 1N6001B_T50R diode has a relatively low voltage generating capability. The device is rated at 5 volts with a maximum power dissipation of 500mW. This is ideal for a range of applications such as protecting against overvoltage in automotive circuits, power management, communication systems and portable applications. In addition to this, it can be used as a frequency stability and over voltage protection device. It can also be used to protect sensitive circuits in industrial equipment and computer systems.
The 1N6001B_T50R diode is constructed of a PN junction formed by a silicon P and N type material, respectively. This forms the Zener breakdown characteristics of the device. When the Zener breakdown voltage is applied, it causes the voltage drop across the junction to be equal to the Zener voltage. This voltage drop will remain constant regardless of the magnitude of the reverse voltage applied.
The working principle of a 1N6001B_T50R diode is very similar to that of a standard rectifier diode. A small current flows through the diode epitaxy when a small reverse voltage is applied. As this voltage is increased, the current increases until it reaches the breakdown voltage of the device. At this point, the current starts to flow through the diode in the reverse direction, allowing the voltage to remain constant irrespective of the magnitude of the reverse voltage.
In addition to the above mentioned application and working principles, the 1N6001B_T50R diode can also be used for a variety of other purposes such as rectifying AC voltages, protecting against short circuit conditions, lighting control and high speed switching. In these applications, it is important to select the correct Zener or avalanche breakdown voltage in order to ensure that the device operates correctly.
The 1N6001B_T50R can be used in a range of systems and applications. For example, it can be used to protect sensitive circuits from over voltage or voltage fluctuations, or in a multiplexer module where the signal remains stable regardless of the input signals. The 1N6001B_T50R is a high performance yet cost effective solution for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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