1N6023UR Allicdata Electronics
Allicdata Part #:

1N6023UR-ND

Manufacturer Part#:

1N6023UR

Price: $ 2.58
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: ZENER DIODE
More Detail: Zener Diode
DataSheet: 1N6023UR datasheet1N6023UR Datasheet/PDF
Quantity: 1000
264 +: $ 2.32518
Stock 1000Can Ship Immediately
$ 2.58
Specifications
Series: *
Part Status: Active
Description

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1N6023UR Application Field and Working Principle

1N6023UR is a series of single Zener diodes, designed to protect electronic components from damage when there is an overvoltage, a high energy surge, or a short circuit. It has a wide application field ranging from consumer electronics to medical instruments.

The 1N6023UR is a single PN junction diode with an electric field applied to it. This electric field increases the threshold voltage at which the diode starts to conduct in a reverse way. The breakdown voltage of the diode is the same as the electric field, and is referred to as the Zener voltage. It is the voltage at which the diode starts to conduct in the reverse direction.

The working principle of 1N6023UR is based on the conventional theory of PN junction diodes. When a PN junction is connected in a forward bias, the conduction is mainly controlled by the resistance across the junction. When a reverse bias is applied, the PN junction behaves like a capacitor, allowing charge carriers to move freely across it. The Zener voltage of the diode is the voltage required for a forward bias to start conducting.

When the voltage exceeds the Zener voltage, the diode begins to conduct in a reverse bias. This happens because the electric field increases the breakdown voltage of the diode. The conductivity of the diode increases greatly and its resistance starts to drop. As the voltage increases, the electric field not only increases, but also the current passing through the diode.

In summary, the 1N6023UR is a single PN junction diode suitable for a wide range of applications. It has a specified breakdown voltage and a specified power dissipation. The working principle is based on the electric field created by a reverse bias on the diode, which increases the breakdown voltage of the diode. The diode is capable of passing large currents, and can protect electronic components from damage when there is an overvoltage, a high energy surge, or a short circuit.

The specific data is subject to PDF, and the above content is for reference

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