| Allicdata Part #: | 1N6278ARL4G-ND |
| Manufacturer Part#: |
1N6278ARL4G |
| Price: | $ 0.00 |
| Product Category: | Circuit Protection |
| Manufacturer: | Littelfuse Inc. |
| Short Description: | TVS DIODE 17.1V 27.7V AXIAL |
| More Detail: | N/A |
| DataSheet: | 1N6278ARL4G Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | 0.00000 |
| Current - Peak Pulse (10/1000µs): | -- |
| Base Part Number: | 1N6278A |
| Supplier Device Package: | Axial |
| Package / Case: | DO-201AD, Axial |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Series: | Mosorb™ |
| Voltage - Clamping (Max) @ Ipp: | 27.7V |
| Voltage - Breakdown (Min): | 19V |
| Voltage - Reverse Standoff (Typ): | 17.1V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Obsolete |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 1N6278ARL4G is a TVS-Diodes that is specifically designed for semiconductor protection applications. It is an ultra-low capacitance, low-capacitance, high-voltage TVS diode designed to protect low voltage 0.9V CMOS logic gates from transient overvoltage or ESD events.
The 1N6278ARL4G contains two transistors and two Zener diodes in a single package. The transistors are used to reduce the junction capacitance between the two Zener diodes, thus minimizing the capacitance effects. The Zener diodes provide protection by clamping any transient surges or spikes that may occur on the signal lines and protecting them from damage.
To understand the application fields and working principles of the 1N6278ARL4G, it\'s important to understand how ESD and transients can cause damage to sensitive low voltage CMOS circuits. ESD is caused by the sudden discharge of static electricity, which can cause many types of damage to a circuit. Transients occur when surges of high voltage or current occur on a signal line, which can also cause damage.
The 1N6278ARL4G is designed to protect against these transients and to protect the semiconductor devices for which it is designed. It works by utilizing a combination of two transistors and two Zener diodes. As transients and ESD occur, the transistors switch on and act as a current sink, limiting the voltage across the Zener diodes and dissipating the excess energy into the transistor. This prevents the transients from damaging the components in the circuit.
The 1N6278ARL4G provides an effective means of protection against ESD and transients in low voltage CMOS circuits. It is designed to protect the semiconductor components from damage due to transient overvoltage or ESD events. This makes it ideal for use in many types of sensitive circuitry, such as high-end consumer electronics and devices used in medical instrumentation.
In summary, the 1N6278ARL4G is a TVS-Diodes designed specifically for semiconductor protection applications. It combines two transistors and two Zener diodes in a single package to provide protection against ESD and transients. The 1N6278ARL4G is designed to protect low voltage 0.9V CMOS logic gates and is ideal for use in many types of sensitive circuitry, such as high-end consumer electronics and devices used in medical instrumentation.
The specific data is subject to PDF, and the above content is for reference
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1N6278ARL4G Datasheet/PDF