Allicdata Part #: | 1N6628US-ND |
Manufacturer Part#: |
1N6628US |
Price: | $ 15.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 660V 1.75A A-MELF |
More Detail: | Diode Standard 660V 1.75A Surface Mount A-MELF |
DataSheet: | 1N6628US Datasheet/PDF |
Quantity: | 16 |
1 +: | $ 13.97340 |
10 +: | $ 12.70080 |
100 +: | $ 10.79570 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 660V |
Current - Average Rectified (Io): | 1.75A |
Voltage - Forward (Vf) (Max) @ If: | 1.35V @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 2µA @ 660V |
Capacitance @ Vr, F: | 40pF @ 10V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, A |
Supplier Device Package: | A-MELF |
Operating Temperature - Junction: | -65°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
1N6628US diode is a series of rectifier diodes that are used in power conditioning, voltage regulation and other rectification applications. A rectifier diode is a two-terminal semiconductor that acts as a switch and is used to convert alternating current (AC) to direct current (DC). The diode is made of a single layer of P-type semiconductor that is connected to an N-type layer. The directional feature of the diode allows current to flow in one direction only, from the anode (positive) to the cathode (negative). This type of diode is ideal for power conditioning, voltage regulation and other rectification applications.
1N6628US diodes have a high peak reverse voltage of 1000V and a maximum repetitive reverse voltage of 800V. They are designed to have a low reverse leakage current and a fast recovery time, meaning that they can be used as a power conditioning device or voltage regulator. The diode has a very low forward voltage drop, enabling it to be used in power delivery systems such as car batteries, solar cells and wind turbines. Its low on-state resistance makes it an ideal choice for powering a broad range of electronic devices.
The 1N6628US diodes have a very high surge current capability, meaning that they can be used in environments where the current requirements may rapidly increase, such as motor and appliance start-ups. The diode can withstand high surge currents, even when subjected to high temperature extremes, making it ideal for use in harsh environments. The diode has a wide junction temperature range and can operate within a range of -55°C to +175°C.
The 1N6628US diode is a versatile device and can be used in a wide range of applications. It can be used for power conditioning, voltage regulation, rectification, surge and temperature protection, as well as for other applications such as motor and appliance control, frequency control and switching. The diode has a low reverse leakage current, fast recovery time, low on-state resistance and high surge capability, making it suitable for use in a variety of industrial, automotive and military/aerospace applications.
The working principle of 1N6628US diode is straightforward. The diode acts as a switch, allowing current to flow only in one direction, from the anode (positive) to the cathode (negative). When the anode is positive, the diode is in a “forward-biased” state and current can flow through it. When the anode is negative, the diode is in a “reverse-biased” state and current cannot flow through it. This feature allows the 1N6628US to be used in a wide variety of applications, including power conditioning, voltage regulation and rectification.
In conclusion, the 1N6628US is a series of rectifier diodes designed for power conditioning, voltage regulation and rectification applications. The diode has a high peak reverse voltage rating, low forward bias voltage drop and low reverse leakage current. It is capable of handling high surge currents in extreme temperature conditions and has a wide junction temperature range. These features make the 1N6628US diode a versatile choice for industrial, automotive and military/aerospace applications in which fast recovery time and high surge requirements are important.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N6640US | Microsemi Co... | 8.23 $ | 48 | DIODE GEN PURP 75V 300MA ... |
1N6628US | Microsemi Co... | 15.37 $ | 16 | DIODE GEN PURP 660V 1.75A... |
1N6663US | Microsemi Co... | 16.49 $ | 8 | DIODE GEN PURP 600V 500MA... |
1N6643US | Microsemi Co... | 7.09 $ | 456 | DIODE GEN PURP 50V 300MA ... |
1N6642US | Microsemi Co... | -- | 995 | DIODE GEN PURP 75V 300MA ... |
1N6622 | Microsemi Co... | 9.49 $ | 102 | DIODE GEN PURP 600V 1.2A ... |
1N6660 | Microsemi Co... | 100.37 $ | 5 | DIODE ARRAY SCHOTTKY 45V ... |
1N6632 | Microsemi Co... | 9.36 $ | 1000 | DIODE ZENER 3.3V 5W AXIAL... |
1N6633US | Microsemi Co... | 9.65 $ | 1000 | DIODE ZENER 3.6V 5W D5BZe... |
1N6634US | Microsemi Co... | 9.65 $ | 1000 | DIODE ZENER 3.9V 5W D5BZe... |
1N6635US | Microsemi Co... | 9.65 $ | 1000 | DIODE ZENER 4.3V 5W D5BZe... |
1N6636US | Microsemi Co... | 9.65 $ | 1000 | DIODE ZENER 4.7V 5W D5BZe... |
1N6633 | Microsemi Co... | 10.3 $ | 1000 | DIODE ZENER 3.6V 5W AXIAL... |
1N6634 | Microsemi Co... | 10.3 $ | 1000 | DIODE ZENER 3.9V 5W AXIAL... |
1N6636 | Microsemi Co... | 10.3 $ | 1000 | DIODE ZENER 4.7V 5W AXIAL... |
1N6675 | Microsemi Co... | 0.0 $ | 1000 | DIODE SCHOTTKY 20V 200MA ... |
1N6621US | Microsemi Co... | -- | 55 | DIODE GEN PURP 440V 1.2A ... |
1N6622US | Microsemi Co... | 11.61 $ | 63 | DIODE GEN PURP 660V 1.2A ... |
1N6632US | Microsemi Co... | 9.68 $ | 1000 | DIODE ZENER 3.3V 5W D5BZe... |
1N6635 | Microsemi Co... | 10.3 $ | 1000 | DIODE ZENER 4.3V 5W AXIAL... |
1N6637 | Microsemi Co... | 10.3 $ | 1000 | DIODE ZENER 5.1V 5W AXIAL... |
1N6637US | Microsemi Co... | 9.65 $ | 1000 | DIODE ZENER 5.1V 5W D5BZe... |
1N6677 | Microsemi Co... | 0.0 $ | 1000 | RECTIFIER DIODEDiode |
1N6677-1 | Microsemi Co... | 3.44 $ | 1000 | RECTIFIER DIODEDiode |
1N6643 | Microsemi Co... | 4.14 $ | 1000 | DIODE GEN PURPOSEDiode |
1N6677UR-1 | Microsemi Co... | 4.49 $ | 1000 | RECTIFIER DIODEDiode |
1N6638 | Microsemi Co... | 4.7 $ | 1000 | DIODE GEN PURPOSEDiode |
1N6661 | Microsemi Co... | 5.25 $ | 1000 | RECTIFIER DIODEDiode |
1N6640 | Microsemi Co... | 5.4 $ | 1000 | DIODE GEN PURPOSEDiode |
1N6642 | Microsemi Co... | 5.4 $ | 1000 | DIODE GEN PURPOSEDiode |
1N6641 | Microsemi Co... | 5.44 $ | 1000 | DIODE GEN PURPOSEDiode |
1N6638US | Microsemi Co... | 5.87 $ | 1000 | DIODE GEN PURPOSEDiode |
1N6641US | Microsemi Co... | 6.42 $ | 1000 | DIODE GEN PURPOSEDiode |
1N6639US | Microsemi Co... | 6.46 $ | 1000 | DIODE GEN PURPOSEDiode |
1N6628 | Microsemi Co... | 7.0 $ | 1000 | DIODE GEN PURP 600V 1.75A... |
1N6662 | Microsemi Co... | 7.24 $ | 1000 | RECTIFIER DIODEDiode |
1N6620 | Microsemi Co... | 7.4 $ | 1000 | DIODE GEN PURP 220V 1.2A ... |
1N6621 | Microsemi Co... | 7.4 $ | 1000 | DIODE GEN PURP 440V 1.2A ... |
1N6625 | Microsemi Co... | 7.4 $ | 1000 | DIODE GEN PURP 1.1KV 1A A... |
1N6626 | Microsemi Co... | 7.4 $ | 1000 | DIODE GEN PURP 220V 1.75A... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...