1N6628US Allicdata Electronics
Allicdata Part #:

1N6628US-ND

Manufacturer Part#:

1N6628US

Price: $ 15.37
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 660V 1.75A A-MELF
More Detail: Diode Standard 660V 1.75A Surface Mount A-MELF
DataSheet: 1N6628US datasheet1N6628US Datasheet/PDF
Quantity: 16
1 +: $ 13.97340
10 +: $ 12.70080
100 +: $ 10.79570
Stock 16Can Ship Immediately
$ 15.37
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 660V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 660V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Description

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1N6628US diode is a series of rectifier diodes that are used in power conditioning, voltage regulation and other rectification applications. A rectifier diode is a two-terminal semiconductor that acts as a switch and is used to convert alternating current (AC) to direct current (DC). The diode is made of a single layer of P-type semiconductor that is connected to an N-type layer. The directional feature of the diode allows current to flow in one direction only, from the anode (positive) to the cathode (negative). This type of diode is ideal for power conditioning, voltage regulation and other rectification applications.

1N6628US diodes have a high peak reverse voltage of 1000V and a maximum repetitive reverse voltage of 800V. They are designed to have a low reverse leakage current and a fast recovery time, meaning that they can be used as a power conditioning device or voltage regulator. The diode has a very low forward voltage drop, enabling it to be used in power delivery systems such as car batteries, solar cells and wind turbines. Its low on-state resistance makes it an ideal choice for powering a broad range of electronic devices.

The 1N6628US diodes have a very high surge current capability, meaning that they can be used in environments where the current requirements may rapidly increase, such as motor and appliance start-ups. The diode can withstand high surge currents, even when subjected to high temperature extremes, making it ideal for use in harsh environments. The diode has a wide junction temperature range and can operate within a range of -55°C to +175°C.

The 1N6628US diode is a versatile device and can be used in a wide range of applications. It can be used for power conditioning, voltage regulation, rectification, surge and temperature protection, as well as for other applications such as motor and appliance control, frequency control and switching. The diode has a low reverse leakage current, fast recovery time, low on-state resistance and high surge capability, making it suitable for use in a variety of industrial, automotive and military/aerospace applications.

The working principle of 1N6628US diode is straightforward. The diode acts as a switch, allowing current to flow only in one direction, from the anode (positive) to the cathode (negative). When the anode is positive, the diode is in a “forward-biased” state and current can flow through it. When the anode is negative, the diode is in a “reverse-biased” state and current cannot flow through it. This feature allows the 1N6628US to be used in a wide variety of applications, including power conditioning, voltage regulation and rectification.

In conclusion, the 1N6628US is a series of rectifier diodes designed for power conditioning, voltage regulation and rectification applications. The diode has a high peak reverse voltage rating, low forward bias voltage drop and low reverse leakage current. It is capable of handling high surge currents in extreme temperature conditions and has a wide junction temperature range. These features make the 1N6628US diode a versatile choice for industrial, automotive and military/aerospace applications in which fast recovery time and high surge requirements are important.

The specific data is subject to PDF, and the above content is for reference

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