1N6625E3 Allicdata Electronics
Allicdata Part #:

1N6625E3-ND

Manufacturer Part#:

1N6625E3

Price: $ 13.62
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 1.1KV 1A AXIAL
More Detail: Diode Standard 1100V 1A Through Hole A, Axial
DataSheet: 1N6625E3 datasheet1N6625E3 Datasheet/PDF
Quantity: 1000
46 +: $ 12.25760
Stock 1000Can Ship Immediately
$ 13.62
Specifications
Series: --
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.95V @ 1.5A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 80ns
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 150°C
Description

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1N6625E3 is a silicon rectifier diode with low forward voltage drop and high current capacity. It is one of the popular rectifiers for industrial, automotive, and consumer electronics. The 1N6625E3 has a high reverse power rating, high surge rating, and good avalanche characteristics. Its robust construction ensures high reliability and long service life in various automotive and consumer applications.

Application Field

1N6625E3 is typically used in automotive high side and low-side protection circuits, DC-DC converters, battery chargers, and power supplies. It is also used in consumer appliances such as hair dryers, irons, and other small consumer devices that require heavy load current. In addition, the 1N6625E3 is used in automotive, industrial, and consumer circuit protection, as well as transient suppression applications.

Working Principle

1N6625E3 is a solid-state semiconductor device that acts as a one-way valve for electrical current. It has two layers of semiconductor material, p-type and n-type, which are divided by a thin layer of electrical insulation. When an applied voltage across the semiconductor junction become sufficiently large, current flows in only one direction through the device, allowing a flow of electric current from one side to the other side. The reverse breakdown voltage of a diode describes the device\'s maximum reverse voltage rating. When the applied reverse voltage exceeds this rating, the device begins to conduct in reverse and can be damaged.

The forward voltage drop of a diode is determined by the material’s band gap and is typically between 600-800mV. This voltage drop is dependent on the current passing through the diode. The higher the load current, the lower this voltage drop becomes and the diode can dissipate heat more efficiently. The reverse leakage current is also similar to that of a conventional diode and is determined by the device junction temperature and the applied reverse voltage.

1N6625E3 has a wide range of applications and are ideal for use in automotive and industrial power protection circuits, as well as in power supplies and other applications requiring high-current rectification. By using the device as designed, excellent performance and stability can be achieved. The 1N6625E3 is capable of providing excellent performance in automotive and industrial applications while maintaining an excellent thermal resistance.

The specific data is subject to PDF, and the above content is for reference

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