| Allicdata Part #: | 1N6642USE3-ND |
| Manufacturer Part#: |
1N6642USE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | SWITCHING |
| More Detail: | Diode Standard 75V 300mA Surface Mount B, SQ-MELF |
| DataSheet: |  1N6642USE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 75V |
| Current - Average Rectified (Io): | 300mA |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 100mA |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 5ns |
| Current - Reverse Leakage @ Vr: | 500nA @ 75V |
| Capacitance @ Vr, F: | 5pF @ 0V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | SQ-MELF, B |
| Supplier Device Package: | B, SQ-MELF |
| Operating Temperature - Junction: | -65°C ~ 175°C |
Description
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1N6642USE3 application field and working principle
The 1N6642USE3 diode, a single rectifier, is a useful device in many electronic applications, especially in protection circuits, low-voltage systems, and various applications of electrical power engineering, such as power control and energy transformation. The device also has its uses in electronic lighting ballasts, automotive engines, and mobile electronics. Also, it functions as a Zener diode and generates a very low leakage current.The 1N6642USE3 diode is a semiconductor device, made of a special semiconductor material such as Silicon and Germanium, by a process of semiconductor doping. It has two terminals, the anode and the cathode. A bias voltage applied across the anode and cathode terminal creates a reverse bias, which will allow for conduction through the device. In semiconductor terms, the 1N6642USE3 diode is referred to as a p-n junction diode, since the two terminals create an ‘on/off’ switch that can be used to control the flow of current in a circuit. Its working depends on the reverse bias voltage applied across the anode and cathode terminals, which is related to its forward voltage drop, and determines the amount of current flowing through it. The reverse bias voltage applied across the terminals creates an electric field in the depletion region of the diode\'s conduction band. This depletion region has no intervening electrons, and contains negative charges. When bias voltage is applied, the negative charges in the depletion region create a potential barrier, which blocks any electrons from entering the diode. By controlling this reverse bias voltage, it’s easy to control the flow of current through the diode, and to make it ‘on’ or ‘off’. Due to its small size and low power consumption, the 1N6642USE3 diode is also extensively used in computer components, such as transistors and microcontrollers, in order to control the current flow through them. Moreover, it serves as a diode bridge and provides power regulation in different electronic equipment.In summary, the 1N6642USE3 diode is a practical and versatile device. When used in electronics applications, it can be used to control the current flow, provide power regulation, and protect other components in circuits from any over-voltage conditions. Its working principle is based on the reverse bias voltage applied across the anode and cathode terminals, which creates a potential barrier in the depletion region, which helps to control the flow of current through the diode.
The 1N6642USE3 diode, a single rectifier, is a useful device in many electronic applications, especially in protection circuits, low-voltage systems, and various applications of electrical power engineering, such as power control and energy transformation. The device also has its uses in electronic lighting ballasts, automotive engines, and mobile electronics. Also, it functions as a Zener diode and generates a very low leakage current.The 1N6642USE3 diode is a semiconductor device, made of a special semiconductor material such as Silicon and Germanium, by a process of semiconductor doping. It has two terminals, the anode and the cathode. A bias voltage applied across the anode and cathode terminal creates a reverse bias, which will allow for conduction through the device. In semiconductor terms, the 1N6642USE3 diode is referred to as a p-n junction diode, since the two terminals create an ‘on/off’ switch that can be used to control the flow of current in a circuit. Its working depends on the reverse bias voltage applied across the anode and cathode terminals, which is related to its forward voltage drop, and determines the amount of current flowing through it. The reverse bias voltage applied across the terminals creates an electric field in the depletion region of the diode\'s conduction band. This depletion region has no intervening electrons, and contains negative charges. When bias voltage is applied, the negative charges in the depletion region create a potential barrier, which blocks any electrons from entering the diode. By controlling this reverse bias voltage, it’s easy to control the flow of current through the diode, and to make it ‘on’ or ‘off’. Due to its small size and low power consumption, the 1N6642USE3 diode is also extensively used in computer components, such as transistors and microcontrollers, in order to control the current flow through them. Moreover, it serves as a diode bridge and provides power regulation in different electronic equipment.In summary, the 1N6642USE3 diode is a practical and versatile device. When used in electronics applications, it can be used to control the current flow, provide power regulation, and protect other components in circuits from any over-voltage conditions. Its working principle is based on the reverse bias voltage applied across the anode and cathode terminals, which creates a potential barrier in the depletion region, which helps to control the flow of current through the diode.
The specific data is subject to PDF, and the above content is for reference
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