Name: 1N706A
Brand: Microsemi Corporation
SKU: 1N706A-ND
Price: 1.39 USD
Availability: InStock

Allicdata Part #:	1N706A-ND
Manufacturer Part#:	1N706A
Price:	$ 1.39
Product Category:	Discrete Semiconductor Products
Manufacturer:	Microsemi Corporation
Short Description:	DIODE ZENER 5.8V 250MW DO35
More Detail:	Zener Diode 5.8V 250mW ±5% Through Hole DO-35
DataSheet:	1N706A Datasheet/PDF
Quantity:	1000

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Specifications

Series:	--
Packaging:	Bulk
Part Status:	Active
Voltage - Zener (Nom) (Vz):	5.8V
Tolerance:	±5%
Power - Max:	250mW
Impedance (Max) (Zzt):	20 Ohms
Current - Reverse Leakage @ Vr:	5µA @ 5.8V
Operating Temperature:	--
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	DO-35

Description

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1N706A is a silicon planar power Zener diode with high temperature stability and a very good temperature coefficient of reverse voltage. It is generally used in electronic circuits such as consumer electronics, computers, telephone and communications, aerospace, automotive, and military applications. 1N706A is designed to operate in high-frequency applications, with a maximum reverse voltage capability of 7V.1N706A is a single Zener diode. Zener diodes have three primary characteristics: reverse breakdown voltage, maximum power dissipation, and temperature coefficient. The breakdown voltage, also known as the Zener voltage, is the voltage at which the diode reverse-biases and begins to breakdown. The maximum power dissipation is the maximum amount of power the diode can handle. The temperature coefficient is a measure of how the diode’s characteristics changes with temperature.The working principle of 1N706A is based on the process of Zener breakdown. This occurs when the junction of the diode is reverse biased at a voltage sufficient to cross the normal junction barrier potential. This allows current to enter the junction and breakdown the silicon material. The external bias voltage causes the Zener voltage to increase, and also causes the diode to become increasingly conductive due to the avalanche breakdown voltage, which is larger than the external bias voltage.1N706A is a diode with very low power dissipation and good temperature stability. This makes the 1N706A ideal for use in applications with varying temperatures such as automotive and military applications, where it can maintain its Zener breakdown value under varying temperature conditions. The low power dissipation also makes it ideal for use in consumer electronics and communications, where space is limited and power efficiency needs to be maintained.In conclusion, 1N706A is a single Zener diode with excellent temperature stability, low power dissipation and superb reverse breakdown voltage. It is used in applications such as consumer electronics, computers, telephone and communications, aerospace, automotive, and military applications. The working principle is based on the process of Zener breakdown, which occurs when the junction of the diode is reverse biased at a voltage sufficient to cross the normal junction barrier potential. This allows current to enter the junction and breakdown the silicon material and produces the Zener voltage.

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1N706A-ND

1N706A

Discrete Semiconductor Products