1N751ATR Allicdata Electronics

1N751ATR Discrete Semiconductor Products

Allicdata Part #:

1N751ATR-ND

Manufacturer Part#:

1N751ATR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 5.1V 500MW DO35
More Detail: Zener Diode 5.1V 500mW ±5% Through Hole DO-35
DataSheet: 1N751ATR datasheet1N751ATR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 5.1V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 17 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Base Part Number: 1N751
Description

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1N751ATR Application Field and Working Principle

The 1N751ATR is a zener diode, which is primarily used in regulating voltage and current in a specified range of voltages. The 1N751ATR has a maximum rated power of 1.3W and a maximum peak forward current of 250mA. The 1N751ATR has a maximum reverse voltage of 5.1V and is packaged in a low-profile and efficient 0.2 inch surface mount package. This diode can be used in a variety of applications including power management, voltage and current protection, over-voltage protection, static electrical control, and line-level switching.

The working principle of a zener diode is based on the voltage breakdown of a PN junction. When a reverse voltage is applied across the zener diode, an avalanche breakdown occurs in the PN junction. This breakdown is characterized by a characteristic breakdown voltage which can be determined from the diode\'s data sheet. The avalanche breakdown produces an increased current through the diode, and this increased current is used for regulating the voltage or current in the specified range of voltages.

The 1N751ATR is a very efficient diode and is ideal for use in a variety of different applications. It can be used to regulate the voltage in power supplies, to protect sensitive components from over-voltages and to provide over-current protection. It can also be used in static electrical control, line-level switching and current-limiting circuits. The diode is constructed of an N-type semiconductor material and is encapsulated in a low-profile and efficient 0.2 inch surface mount package.

The 1N751ATR is an excellent choice for many applications where voltage and current regulation is required. Its low profile and efficient 0.2 inch surface mount package makes it an ideal choice for applications where space is limited. Its high efficiency and stable performance make it an ideal choice for a variety of applications. Additionally, the diode\'s maximum peak forward current of 250mA allows for use in high-current applications.

In conclusion, the 1N751ATR is a high-efficiency zener diode which is capable of regulating voltage and current in a specified range of voltages. It is packaged in a low-profile and efficient 0.2 inch surface mount package and is ideal for a variety of applications including power management, static electrical control, line-level switching and current-limiting circuits. Its efficient construction makes it well-suited for use in high-current applications, and its high efficiency and stable performance make it an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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