1N753A-1TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	6.2V
Tolerance:	±5%
Power - Max:	500mW
Impedance (Max) (Zzt):	3 Ohms
Current - Reverse Leakage @ Vr:	5µA @ 6.2V
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	DO-35

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Introduction of 1N753A-1TR

1N753A-1TR is a single-zone zener diode with low noise and low reverse leakage current. It is capable of operating in a wide range of temperatures and is a very common electronic component. It has a relatively low breakdown voltage, high stability and low capacitance.

Application fields of 1N753A-1TR

1N753A-1TR can be used as a voltage regulator to provide a source of reliable and stable voltage for various electrical systems. It can also be used for protection against overvoltage in various circuits. It is used in the power supply, oscillator, amplifier, feedback, switching, clipper, detector and other circuits.The 1N753A-1TR can also be used in receiver circuits. It is used to stabilize the receiver\'s signal to noise ratio and reduce distortion. It can be used as a voltage reference source to provide a stable voltage and current source for voltage sensitive components.

Working Principle of 1N753A-1TR

The 1N753A-1TR is a zener diode, meaning that it is designed to operate in reverse-bias conditions. When the applied voltage across the diode is below the zener breakdown voltage, the diode behaves like an ideal diode, with little current flow. But when the voltage is greater than the breakdown voltage, the diode will start to pass current, causing the voltage to be regulated at the breakdown voltage. This process is known as zener breakdown.The zener breakdown is caused by the field created by the reverse voltage. As the voltage increases, the electric field at the junction increases, and when the field exceeds a certain threshold, the electrons are able to tunnel through the junction, thus allowing current flow.The 1N753A-1TR diode also has an internal capacitance, which affects its behavior at high frequencies. The capacitance of the diode is proportional to the breakdown voltage and inverse to its size. When used in high frequency applications, the diode must be carefully selected for its capacitance, as well as its breakdown voltage.

Conclusion

The 1N753A-1TR is an extremely versatile device, capable of performing many tasks. Its low breakdown voltage makes it well suited for many different applications. Its low capacitance makes it ideal for use in high frequency circuits. Its low noise and low reverse leakage current make it well suited for use in voltage regulation, voltage reference and receiver circuits.

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