1N756A Allicdata Electronics

1N756A Discrete Semiconductor Products

Allicdata Part #:

1N756AMS-ND

Manufacturer Part#:

1N756A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 8.2V 500MW DO7
More Detail: Zener Diode 8.2V 500mW ±5% Through Hole DO-7 (DO-2...
DataSheet: 1N756A datasheet1N756A Datasheet/PDF
Quantity: 825
Stock 825Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 8.2V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 6V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Supplier Device Package: DO-7 (DO-204AA)
Description

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The 1N756A diode is a single Zener diode designed to operate over a wide range of temperatures and current levels. It is an ideal choice for a variety of applications due to its variety of features, such as high surge capability, high stability, and low power consumption.

The 1N756A is classified as a Zener diode due to its ability to maintain a constant voltage regardless of current. This is achieved by having a breakdown region, which is the threshold voltage the device must pass in order to become conductive. As current levels increase, the voltage across the diode is kept constant at this threshold voltage, a characteristic known as Zener breakdown.

The 1N756A has a wide range of applications due to its versatility. It can be used to regulate the voltage in various circuits, such as in reverse-bias configurations to regulate the voltage of power supplies, in power-supply applications as part of an EMI filter, and as a voltage reference in digital circuits. It is also used to protect sensitive circuitry from high-voltage fluctuations due to its reverse polarity protection.

The 1N756A works through a simple working principle. It is composed of a semiconductor material that is doped with chemicals. When the device is forward-biased, the doping imparts a potential barrier that prevents current from flowing. When the device is reverse-biased, the doping creates a potential gradient that allows it to conduct current. As the voltage across the diode increases, it reaches a point known as the Zener breakdown voltage. At this point, the diode has an avalanche breakdown, which is a phenomenon where electrons accelerate across a region in the diode and allow the current to flow. This current flow is maintained at a constant level, thus providing the desired voltage regulation.

The 1N756A is a versatile device that offers many features and capabilities. It is an ideal choice for a variety of applications due to its wide range of temperature and current ratings, its high surge capability, and its low power consumption. This makes it an excellent value for anyone looking for a reliable Zener diode.

The specific data is subject to PDF, and the above content is for reference

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