1N755ATR Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Voltage - Zener (Nom) (Vz):	7.5V
Tolerance:	±5%
Power - Max:	500mW
Impedance (Max) (Zzt):	6 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 1V
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 200mA
Operating Temperature:	-65°C ~ 200°C
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	DO-35
Base Part Number:	1N755

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1N755ATR Application Field And Working Principle

1N755ATR is a silicon axial-leaded Zener diode ideal for a wide range of applications from miniature Dallas and other semiconductors. It is particularly suitable for voltage regulation and reference in small electronic and low-frequency applications.The 1N755ATR is a small, hollow-cathode, axial-leaded Zener diode that has a rated voltage range of 4.7 to 59 volts and a power rating of 0.25 watts at ambient temperature. Its low forward voltage drop, low noise and low junction capacitance make it ideal for voltage regulation and reference applications.The 1N755ATR utilizes a hollow cathode structure made up of a semiconductor substrate or layer surrounded by an extended, protective shielding layer. This shielding layer is used to protect the semiconductor layer which hosts the Zener diode structure. The protective layer also works to improve the device’s electrical performance, reduce noise, and increase its reliability.The working principle of 1N755ATR is based on the PN junction construction. The anode of the device is formed from a heavily doped N-type semiconductor. The cathode is formed from a lightly doped P-type semiconductor material. When a forward-biased current is applied to the diode, electrons from the N-type semiconductor diffuse across the junction and combine with holes in the P-type material forming the N-P junction. When the voltage applied to the diode reaches a certain level, called the Zener voltage, the junction breaks down and current passes freely from the anode to the cathode. This phenomenon is known as the Zener effect.In conclusion, the 1N755ATR is an excellent choice for applications requiring reliable voltage regulation, zero voltage reference, and low noise. The device’s PN junction construction, low forward voltage drop, and hollow cathode structure make it an ideal choice for a wide range of applications.

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