1N937B

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1N937B is a type of single semiconductor diode also known as a Zener diode, specifically designed to operate in reverse-biased breakdown mode to regulate the voltage across its terminals. This diode is characterized by its ability to hold a current once the voltage reaches the breakdown voltage level, allowing for a relatively constant voltage across its terminals. It is designed to dissipate power over the range of 1 to 200 mW and has an operating temperature of up to 150°C.

The 1N937B is often used in low-voltage regulator circuits, AC line-voltage regulation circuits, voltage clamping, signal clamping and LED protection circuits. It can be used for protection of delicate electronics and radio receivers from transient or overload events. The device is also useful for very low-current Zener stabilizing.

The 1N937B consists of a single junction of P-type and N-type semiconductor material, with a junction-gate oxide layer in place to ensure proper operation. When a reverse bias is applied to the device, the P-N junction breaks down and allows current to flow through the device. This current is limited to the breakdown voltage, which is typically 5.1V and is calculated according to the Zener equation, Vz = Vz (1+Iz/IZT).

The 1N937B\'s performance characteristics are determined by its electrical parameters, such as breakdown voltage, maximum power dissipation, operating temperature, junction capacitance, and storage temperature. These parameters can be modified by changing the material used in the device or by using additional devices such as Zener diodes or transistors. The device also features a comparatively low thermal resistance, making it suitable for applications where high-currents are quickly switched on and off.

In addition to its regulatory function, the 1N937B is also commonly used as a protection device, in order to protect delicate components from sudden surges of overvoltage. By placing a 1N937B in series with the vulnerable components, it will absorb or divert any excess voltage, depending on the overall circuit\'s configuration. The Zener diode is capable of withstanding high power, making it suitable for a variety of applications, such as high-intensity LEDs, radio receivers, and other electronic circuits.

The 1N937B is also a viable option for voltage clamping applications. Here, it functions as an active circuit element, capable of automatically clamping the voltage across its terminals to a predetermined level. This level can be adjusted simply by altering the position of the device in the circuit. Since the voltage clamped by the Zener diode is relatively low, it can be used in a wide range of circuits, both low-voltage and high-voltage ones.

In summary, the 1N937B device is characterized by its capacity to operate in reverse-biased breakdown mode and to provide good voltage regulation in a wide range of applications. This diode\'s ability to absorb over-voltage makes it a viable option for protection circuit design, and its low thermal resistance allows it to be used even in high-currents applications. These factors make the 1N937B one of the most popular Zener diodes available today.

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