1N964B Allicdata Electronics

1N964B Discrete Semiconductor Products

Allicdata Part #:

1N964BMS-ND

Manufacturer Part#:

1N964B

Price: $ 1.50
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 13V 500MW DO7
More Detail: Zener Diode 13V 500mW ±5% Through Hole DO-7
DataSheet: 1N964B datasheet1N964B Datasheet/PDF
Quantity: 1000
455 +: $ 1.34615
Stock 1000Can Ship Immediately
$ 1.5
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 13V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 13 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 9.9V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Supplier Device Package: DO-7
Description

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The 1N964B is a medium-power and low-voltage Zener diode that is used in electrical and electronic circuits. It has a wide range of applications, from voltage regulation to energy conversion. This article will discuss the application field and working principle of the 1N964B.

The 1N964B Zener diode is primarily used for voltage regulation, particularly where low static and dynamic operating parameters are desired. This diode exhibits excellent reverse leakage and a high reverse-recovery time, making it well-suited for voltage regulation in applications such as power supplies, voltage references, voltage dividers, and other specialized circuits. It is also used in automotive applications and consumer electronics.

The 1N964B Zener diode is designed to operate at a specific voltage, with a breakdown voltage of 8 volts and a tolerance range of 5% to 15%. The maximum reverse current for the diode is 50 mA, and the maximum power dissipation is 500 mW, which is suitable for medium-power applications. The diode has a high-voltage reverse cycling rating of 300V, making it suitable for applications with light switching transients.

The 1N964B Zener diode works by using the reverse-bias voltage to reverse-bias junction, which then creates a potential barrier that prevents the current flowing in either the forward or the reverse direction. When a reverse-bias voltage is applied across the diode, a reverse current starts to flow, creating an avalanche breakdown effect that generates an electric field across the junction. This electric field increases exponentially, until it reaches the breakdown value, at which point the diode will start to conduct and give rise to a Zener voltage.

The 1N964B Zener diode is designed to have a high stability, meaning that it will maintain its breakdown voltage even with changes in temperature and current. This makes it suitable for use in automated systems and low-temperature applications. Additionally, the diode has a low forward voltage drop and can be used in applications such as voltage reference and energy conversion.

In conclusion, the 1N964B is a versatile medium-power and low-voltage Zener diode that can be used in a variety of applications such as voltage regulation, low-temperature systems, voltage reference, and energy conversion. Its low forward voltage drop and high reverse-cycle rating make it suitable for use in a wide range of electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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