1N966B TR Allicdata Electronics
Allicdata Part #:

1N966BCSTR-ND

Manufacturer Part#:

1N966B TR

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: DIODE ZENER 16V 500MW DO35
More Detail: Zener Diode 16V 500mW ±5% Through Hole DO-35
DataSheet: 1N966B TR datasheet1N966B TR Datasheet/PDF
Quantity: 1000
10000 +: $ 0.05127
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 16V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 17 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 12.2V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Description

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1N966B TR Application Field and Working Principle The 1N966B TR is a popular Zener diode found in a variety of electronic applications. Zener diodes are often used for electronic applications such as voltage regulation, voltage limiting, and protection from over-voltage or over-current. In a Zener diode, the diode is reverse-biased and operates in a region of negative resistance, which can be used to control the voltage. In the case of the 1N966B TR, the diode is designed to regulate voltage from 6.2 to 39 volts. A key feature of a Zener diode is the ability to withstand high voltages without damaging the electronic components. This is due to its negative resistance, which allows it to absorb excess voltage without becoming damaged. The 1N966B TR has a maximum surge current rating of 1.2A, and a maximum operating temperature of 85°C. The working principle of a Zener diode is relatively simple. When it is reverse biased, it is constructed with two heavily doped “p” and “n” regions that are held within a single piece of semiconductor material. When a voltage is applied in reverse bias, some electrons from the n-region fill the holes in the p-region, and vice versa. These recombination actions create a narrow depletion region between the two regions. At certain reverse voltages, the electric field of the depletion region becomes too high and electrons can tunnel through this region, counteracting the reverse bias. This created current path is referred to as Zener breakdown, and it is responsible for the main characteristics of a Zener diode. The voltage at which Zener breakdown occurs is referred to as the Zener voltage. When the Zener diode is connected in a circuit, current is conducted in the forward direction based on its diode characteristics. At certain voltages, the Zener breakdown currents will begin to flow, and counter the increase in voltage. This keeps the voltage regulated as the forward current is conducted through the diode. In the case of the 1N966B TR, this voltage regulation is capable of producing a regulated output voltage range of 6.2 to 39 volts.There are several other features of Zener diodes which make them useful for controlling voltage. For example, the 1N966B TR can operate in both a temperature-stable and a temperature-sensitive mode, which allows for greater flexibility in its application. Additionally, Zener diodes can be combined with other components to create voltage regulation circuits for a variety of purposes. Overall, Zener diodes are found in a wide variety of applications, including voltage regulation, voltage limiting, and protection from over-voltage or over-current. The 1N966B TR is a popular Zener diode, and its ability to withstand high voltages and provide temperature-stability make it ideal for a range of applications.

The specific data is subject to PDF, and the above content is for reference

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