1PMT4135E3/TR13

Diodes - Zener - Single

The 1PMT4135E3/TR13 is a single zener diode that belongs to a class of semiconductor devices. A zener diode is a diode that utilizes the zener effect - the breakdown behavior of reverse-biased diodes, to regulate a specific voltage level. The 1PMT4135E3/TR13, is designed for use in both digital and analog applications, and is available in standard SOD-123FL and SOT89 packages.

Application Field

The 1PMT4135E3/TR13 is most commonly used for digital applications and offers good reliability with a wide operating temperature range from -55°C to 125°C. It is used as a voltage reference in a variety of applications including automotive, industrial and consumer electronics. It can be used for over-voltage protection, voltage clamping, and voltage stabilizing functions. It is also commonly used in voltage regulator circuits, small servo motor control and switching power supplies.

Working Principle

A zener diode works on the principle of reverse breakdown, which occurs when a reverse bias voltage is applied to an intrinsic diode. When the applied reverse bias voltage reaches the breakdown voltage or zener voltage of the device, an avalanche breakdown occurs in which a large number of minority carriers will be swept across the intrinsic region resulting in a dramatic increase in the current. The breakdown voltage of a zener diode is determined by the doping used to form the p-n junction. The 1PMT4135E3/TR13 has a breakdown voltage range of 3.45V to 5.5V, as specified in its datasheet.

When the reverse biased voltage equals the breakdown voltage of the 1PMT4135E3/TR13, the current increases rapidly and the voltage drop across the diode remains stable. This property of stablizing the voltage drop is the basis of its application in voltage regulation circuits. Furthermore, the 1PMT4135E3/TR13 is able to operate up to the power dissipation of 500mW with excellent power handling capability and can sustain inrush currents up to 1A.

Conclusion

The 1PMT4135E3/TR13 is a single zener diode with useful characteristics for digital and analog applications. It is designed for use in a wide range of applications, from automotive and industrial to consumer electronics. The 1PMT4135E3/TR13 works on the principle of reverse breakdown, with a breakdown voltage range of 3.45V to 5.5V. It is able to operate up to 500mW with excellent power handling capability and can sustain inrush currents up to 1A.