Allicdata Part #: | 1PMT5921BT1OS-ND |
Manufacturer Part#: |
1PMT5921BT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 6.8V 3.2W POWERMITE |
More Detail: | Zener Diode 6.8V 3.2W ±5% Surface Mount Powermite |
DataSheet: | 1PMT5921BT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 6.8V |
Tolerance: | ±5% |
Power - Max: | 3.2W |
Impedance (Max) (Zzt): | 2.5 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 5.2V |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 200mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-216AA |
Supplier Device Package: | Powermite |
Base Part Number: | 1PMT5921 |
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The 1PMT5921BT1 diode is a single Zener diode with an integrated guard-ring structure. It is an ideal diode for applications such as voltage regulation, voltage clamping, voltage protection, and motor control. The 1PMT5921BT1 is designed to offer high performance at a competitive price.
The guard-ring structure of the 1PMT5921BT1 helps it to maintain excellent thermal stability and high reliability in a wide variety of applications. The diode has a wide operating temperature range, from -55°C to 125°C, and can be used in a variety of environmental conditions. It has a wide operating voltage range from 3.3 to 30V, and can be used in both AC and DC applications.
The 1PMT5921BT1 diode has two main components: an active chip and a guard-ring structure. The active chip is composed of a PN junction, which is the basic structure of a diode. The guard-ring structure, which provides electrical insulation against potential junction leakage, is composed of a series of guard-ring diodes connected in parallel. The guard-ring diodes are connected in such a way that they form a path to the negative side of the circuit at all times, thus maintaining the stability of the PN junction.
The working principle of the 1PMT5921BT1 is based on the characteristics of the PN junction. When the diode is forward biased and a current passes through it, the electrons flow into the PN junction and are absorbed by the P-type material. This creates an area of depleted electrons in the P-type material, which increases the resistance of the diode. When the voltage applied to the PN junction reaches the breakdown voltage of the diode, current flows from the N-type material to the P-type material in a significant quantity. This large current flow is capable of protecting the circuit from overvoltage and by shunting this current away from the protected circuitry, it can also protect against current surges.
The 1PMT5921BT1 is an ideal diode for applications such as AC line protection, DC component protection, waveform shaping, voltage regulation, and voltage clamping. It can be used to protect vulnerable circuits and components from external interference, and to ensure that a steady voltage is maintained in a circuit. The 1PMT5921BT1 is a reliable and versatile diode that can be used in a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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